PART |
Description |
Maker |
LN189S |
GaAlAs Infrared Light Emitting Diode
|
PANASONIC[Panasonic Semiconductor]
|
LNA4801L |
GaAlAs Infrared Light Emitting Diode
|
PANASONIC[Panasonic Semiconductor]
|
MIE-324H4 324H4 |
GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE 发动器的T 1包红外发光二极管 Infrared Emitting Diodes (IRED) 红外发光二极管(登记合格决定
|
Unity Opto Technology Co., Ltd. Vishay Intertechnology, Inc. UOT[Unity Opto Technology]
|
MIE-554H4 554H4 |
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE 发动器的T 1 3 / 4包装红外发光二极 Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd. UOT[Unity Opto Technology]
|
TLN208 |
LED LAMP GaAlAs INFRARED EMITTER INFRARED LIGHT - EMISSION DIODE FOR STILL CAMERA LIGHT SOURCE FOR AUTO FOCUS
|
Toshiba Semiconductor Toshiba Corporation
|
LNA2802L |
GaAs Infrared Light Emitting Diode Infrared Light Emitting Diodes
|
PANASONIC[Panasonic Semiconductor] Matsshita / Panasonic
|
SIM-20ST |
Sensors > Infrared Light Emitting Diodes Infrared light emitting diode/ side-view type Infrared Light Emitting Diode, Side-view Type(红外光发射二极管)
|
Rohm CO.,LTD.
|
OP233 OP232 OP231 |
GaAs HERMETIC INFRARED EMITTING DIODES GaALAs Hermetic Infrared Emitting Diode(铝砷化镓密封红外发光二极工作温度范围-65 125
|
OPTEK Technologies Optek Technology
|
Q62702-P5053 SFH4860 |
GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
HE8811 |
GaAlAs Infrared Emitting Diode
|
OPNEXT[Opnext. Inc.]
|