| PART |
Description |
Maker |
| GP801DCM18 |
B Series/ Female Solder 800 A, 1800 V, N-CHANNEL IGBT
Hi-Reliability Chopper Switch Low VCESAT IGBT Module
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| GP801DCS18 |
Chopper Switch Low VCESAT IGBT Module
|
DYNEX[Dynex Semiconductor]
|
| IXGT31N60D1 IXGH31N60D1 |
Ultra-Low VCE(sat) IGBT with Diode(VCES00V，VCE(sat).7V的绝缘栅双极晶体带二极管)) 60 A, 600 V, N-CHANNEL IGBT, TO-247AD
Ultra-Low V IGBT with Diode
|
IXYS, Corp.
IXYS Corporation
|
| PBSS5250T PBSS5250T215 |
50 V; 2 A PNP low VCEsat (BISS) transistor; Package: SOT23 (TO-236AB); Container: Tape reel smd 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
50 V, 2 A PNP low VCEsat (BISS) transistor
50 V 2 A PNP low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| IXGH38N60 |
Ultra-Low VCE(sat) IGBT(1.8V超低VCE(sat)的绝缘栅双极晶体 75 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
|
| IXGH41N60 41N60 |
Ultra-Low VCE(sat) IGBT
|
IXYS[IXYS Corporation]
|
| PBSS5520X PBSS5520X-15 |
20 V, 5 A PNP low VCEsat (BISS) transistor 20伏，5安PNP型低饱和压降BISS）晶体管
20 V, 5 A PNP low VCEsat (BISS) transistor
PNP low VCEsat (BISS) transistor 20 V, 5 A
|
NXP Semiconductors N.V.
|
| IRG7PK35UD1-EPBF |
1400V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode
|
International Rectifier
|
| BUP313D Q67040-A4228-A2 BUP313-D |
From old datasheet system
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free)
IGBT Duopack (IGBT with Antiparallel ...
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| SGW23N60UFD SGW23N60UFDTM |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| SGS13N60UFD SGS13N60UFDTU |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| SGW6N60UFD SGW6N60UFDTM |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
