PART |
Description |
Maker |
FFH50US60S |
50A, 600V StealthDiode 50 A, 600 V, SILICON, RECTIFIER DIODE, TO-247 50A, 600V Stealth⑩ Diode 50A, 600V Stealth Diode
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Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
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ISL9860PF2 ISL9R860PF2 SAMSUNGSEMICONDUCTORCO.LTD. |
8A, 600V Stealth⑩ Diode 8A 600V Stealth Diode 8A, 600V Stealth Diode 8A条,600V的隐形二极管
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FAIRCHILD[Fairchild Semiconductor] SAMSUNG[Samsung semiconductor] Fairchild Semiconductor Corporation SAMSUNG SEMICONDUCTOR CO. LTD. Fairchild Semiconductor, Corp. Samsung Semiconductor Co., Ltd.
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8ETH06 8ETH06-1 8ETH06F 8ETH06FP 8ETH06S |
600V 8A HyperFast Discrete Diode in a D2-Pak (UltraFast) package 600V 8A Hyperfast Discrete Diode in a TO-220 FullPack package 600V 8A HyperFast Discrete Diode in a TO-262 package Hyperfast Rectifier
|
IRF[International Rectifier]
|
BYW52-TR BYW54-TR BYW54-TAP |
DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode AVALANCHE DIODE SOD57 STD-E2 Diode Switching 600V 2A 2-Pin SOD-57 Ammo
|
Vishay Semiconductors
|
IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
|
IRF[International Rectifier]
|
RHRU10060 FN3572 |
100A/ 600V Hyperfast Diode 100A, 600V Hyperfast Diode 100A 600V Hyperfast Diode From old datasheet system
|
INTERSIL[Intersil Corporation]
|
IRG4BC10SD-L IRG4BC10SD-S |
600V DC-1 kHz (Standard) Copack IGBT in a D2-Pak package 600V DC-1 kHz (Standard) Copack IGBT in a TO-262 package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
|
IRF[International Rectifier]
|
30ETH06 30ETH06-1 30ETH06S |
Hyperfast Rectifier 600V 30A HyperFast Discrete Diode in a TO-220AC package 600V 30A HyperFast Discrete Diode in a TO-262 package 600V 30A HyperFast Discrete Diode in a D2-Pak (UltraFast) package
|
IRF[International Rectifier]
|
RURU8060 FN3380 |
From old datasheet system 80A 600V Ultrafast Diode 80A, 600V Ultrafast Diode
|
INTERSIL[Intersil Corporation]
|
12FR120 12FR120M A12FR120 A12FR120M 12FR100 12FR10 |
STANDARD RECOVERY DIODES Hook-Up Wire; Conductor Size AWG:18; No. Strands x Strand Size:16 x 30; Jacket Color:Green/Yellow; Approval Bodies:UL, CSA; Approval Categories:UL AWM Style 1015, CSA Type TEW, JQA-F-, Passes VW-1 Flame Test RoHS Compliant: Yes 标准恢复二极 STANDARD RECOVERY DIODES 标准恢复二极 CAPACITOR 8200UF 25V ELEC TSHA WIRE 18AWG WHITE UL 1015 600V UL STYLE 1015, CSA TYPE TEW, 600V, 105C, GREEN W. YELLOW WIRE, UL1015, 18AWG (16X30G), 600V, RED 100V 12A Std. Recovery Diode in a DO-203AA (DO-4)package 1000V 12A Std. Recovery Diode in a DO-203AA (DO-4)package 1200V 12A Std. Recovery Diode in a DO-203AA (DO-4)package 400V 12A Std. Recovery Diode in a DO-203AA (DO-4)package 600V 12A Std. Recovery Diode in a DO-203AA (DO-4)package 800V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
|
International Rectifier, Corp. IRF[International Rectifier]
|
HGT1S12N60B3DS HGTP12N60B3D HGTG12N60B3D FN4411 |
27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode(27A, 600V, UFS系列带超快二极管 N沟道绝缘栅双极型晶体 27 A, 600 V, N-CHANNEL IGBT, TO-263AB From old datasheet system
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Intersil, Corp. INTERSIL[Intersil Corporation]
|