PART |
Description |
Maker |
AS7C256 AS7C256-10 AS7C256-10JC AS7C256-10PC AS7C2 |
ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix) High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 35 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDIP28 High Performance 32Kx8 CMOS SRAM 高性能32Kx8 CMOS SRAM High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDIP28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDIP28
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ETC[ETC] ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor, Corp. Alliance Semiconductor ...
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IDT71V256SB20Y IDT71V256 IDT71V256SB IDT71V256SB12 |
3.3V CMOS FAST SRAM WITH 2.5V COMPATIBLE INPUTS 256K (32K x 8-BIT) 32K X 8 CACHE TAG SRAM, 12 ns, PDSO28
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Integrated Device Technology, Inc. IDT[Integrated Device Technology]
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UPD4416016G5-A15-9JF UPD4416016G5-A17-9JF UPD44160 |
1M X 16 STANDARD SRAM, 15 ns, PDSO54 CONNECTOR ACCESSORY 16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT
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NEC Corp. NEC[NEC]
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AS7C1025B AS7C1025B-20TJIN AS7C1025B-10JC AS7C1025 |
128 x 64 pixel format, LED or EL Backlight available 128K X 8 STANDARD SRAM, 20 ns, PDSO32 High Speed CMOS Logic Triple 3-Input NAND Gates 14-SOIC -55 to 125 128K X 8 STANDARD SRAM, 12 ns, PDSO32 5V 128K X 8 CMOS SRAM (Center power and ground) 128K X 8 STANDARD SRAM, 20 ns, PDSO32 5V 128K X 8 CMOS SRAM (Center power and ground) 128K X 8 STANDARD SRAM, 15 ns, PDSO32 High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-PDIP -55 to 125 High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-SOIC -55 to 125 SRAM - 5V Fast Asynchronous
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Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
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UPD444001 UPD444001LE-11 UPD444001LE-10 UPD444001L |
4M X 1 STANDARD SRAM, 11 ns, PDSO32 4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT 4分位CMOS SRAM的快速分1
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NEC Corp. NEC, Corp.
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AS7C4096A AS7C4096A-20TIN AS7C4096A-10JC AS7C4096A |
SRAM - 5V Fast Asynchronous 5.0V 512K x 8 CMOS SRAM 512K X 8 STANDARD SRAM, 10 ns, PDSO36 High Speed CMOS Logic Quad Buffers with 3-State Outputs 14-PDIP -55 to 125 512K X 8 STANDARD SRAM, 12 ns, PDSO44 High Speed CMOS Logic Quad Buffers with 3-State Outputs 14-SOIC -55 to 125 512K X 8 STANDARD SRAM, 12 ns, PDSO44
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Alliance Semiconductor ... ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor, Corp.
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UPD434008AL |
4M-Bit CMOS Fast SRAM
|
NEC Electronics
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R1RP0416DSB-2PR R1RP0416D R1RP0416DGE-2LR R1RP0416 |
Memory>Fast SRAM>Asynchronous SRAM 4M High Speed SRAM (256-kword X 16-bit) From old datasheet system
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http:// RENESAS[Renesas Electronics Corporation] Renesas Electronics Corporation.
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HM66AQB18204BP-33 HM66AQB36104BP-40 HM66AQB9404BP- |
Memory>Fast SRAM>QDR SRAM 36-Mbit QDRTMII SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
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HM66AEB18202 HM66AEB36102BP-40 HM66AEB18202BP-30 H |
Memory>Fast SRAM>QDR SRAM 36-Mbit DDR II SRAM 2-word Burst
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Renesas Technology / Hitachi Semiconductor
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HM62W8511HCLJP-12 HM62W8511HC HM62W8511HCJP-10 HM6 |
Memory>Fast SRAM>Asynchronous SRAM 4M High Speed SRAM (512-kword x 8-bit) BOX 5.0X1.85X1.0 W/CLP BLK
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RENESAS[Renesas Electronics Corporation] Renesas Electronics Corporation.
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