PART |
Description |
Maker |
GT25G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
GT25G102SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
GT20G102 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
GT20G101 E001912 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS) From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
GT25G101SM06 GT25G101SM |
SILICON N−CHANNEL IGBT STROBE FLASH APPLICATIONS
|
Toshiba Semiconductor
|
GT20G102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
GT20G102SM |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
GT5G102 GT5G1022-7B5C |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS 5 A, 400 V, N-CHANNEL IGBT
|
Toshiba Semiconductor
|
2SA1802 E000561 |
TRANSISTOR (STROBE FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
2SA1160 E000473 |
From old datasheet system STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
GT8G13206 GT8G132 |
Strobe Flash Applications
|
Toshiba Semiconductor
|