| PART |
Description |
Maker |
| BSO612CV |
Low Voltage MOSFETs - SIPMOS, Complementary, 60V, SO-8, RDSon(N/P) = 0.12/0.30Ohm, Id(N) = 3.1A, Id(P) = -2.0A, NL
SIPMOS Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSO615 BSO615C BSO615CT |
Low Voltage MOSFETs - SIPMOS, Complementary, 60V, SO-8, RDSon(N/P) = 0.11/0.30Ohm, Id(N) = 3.2A, Id(P) = -2.0A, LL
SIPMOS Small-Signal-Transistor SIPMOS小信号晶体管
|
Infineon Technologies A...
Infineon Technologies AG
|
| BUZ72 BUZ72SMD |
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=0.2 Ohm, 10A, NL
SIPMOS Power Transistor
SIPMOS Power Transistor
|
Infineon Technologies AG
|
| BSP295 |
Low Voltage MOSFETs - N-Channel SIPMOS Small-Signal Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSO615NV |
Low Voltage MOSFETs - Dual N-Channel SIPMOS Small-Signal Transistor
SIPMOS Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSS169 |
SIPMOS SMALL-SIGNAL-TRANSISTOR
Low Voltage MOSFETs - Depletion MOSFET, 100V, SOT-23, RDSon = 12Ohm, 0.09A, NL
|
Infineon Technologies A...
Infineon Technologies AG
|
| BUZ30ASMD |
Low Voltage MOSFETs - Power MOSFET, 200V, DPAK, RDSon=0.13 Ohm, 21A, NL
SIPMOS Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPU09P06PL SPD09P06PL |
Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.25
SIPMOS Power-Transistor
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
| BSP316P |
Low Voltage MOSFETs - Small Signal MOSFET, -100V, SOT-223, RDSon =1.80
SIPMOS Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSP372 |
Low Voltage MOSFETs - Small-Signal MOSFET, 100V, SOT-223, RDSon=0,31 Ohm, 1.7A, LL
SIPMOS Small-Signal Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSO304SN |
Low Capacitance Transient Voltage Suppressor Diodes
SIPMOS Small-Signal-Transistor
|
Infineon Technologies AG
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
