| PART |
Description |
Maker |
| BLF2022-120 |
UHF push-pull power LDMOS
|
Philips
|
| BLF2048 |
UHF push-pull power LDMOS transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| BLV857 |
UHF linear push-pull power transistor
|
Philips Semiconductors
|
| BLV859 |
UHF linear push-pull power transistor
|
NXP Semiconductors
Philips Semiconductors
|
| BLV862 |
UHF linear push-pull power transistor
|
NXP Semiconductors
Philips Semiconductors
|
| L293DD013TR L293D L293DD L293D03 L293B-03 L293D-03 |
PUSH-PULL FOUR CHANNEL DRIVER WITH DIODES
PUSH-PULL FOUR CHANNEL DRIVERS
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| BLF4G20LS-110B |
From old datasheet system
UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors
NXP Semiconductors N.V.
|
| D1209UK D1209 |
METAL GATE RF SILICON FET 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-400MHz,Push-Pull)(镀金多用DMOS射频硅场效应20W-12.5V-400MHz,推挽)
|
TT electronics Semelab, Ltd.
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| BLF278 |
VHF push-pull power MOS
|
Philips
|
| BLF247B |
VHF push-pull power MOS transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
