| PART |
Description |
Maker |
| HY57V16161 |
2 Banks x 512K x 16 Bit Synchronous DRAM
|
HYNIX
|
| A43L0616BV A43L0616B A43L0616BV-6 A43L0616BV-6F A4 |
512K X 16 Bit X 2 Banks Synchronous DRAM
|
AMIC Technology
|
| VDS4616A4A-7 VDS4616A4A VDS4616A4A-5 VDS4616A4A-6 |
Synchronous DRAM(512K X 16 Bit X 2 Banks)
|
A-DATA[A-Data Technology]
|
| ADS6632A4A ADS6632A4A-5 ADS6632A4A-5.5 ADS6632A4A- |
Synchronous DRAM(512K X 32 Bit X 4 Banks)
|
ADATA Technology Co., Ltd.
A-DATA[A-Data Technology]
|
| M12L64322A M12L64322A-6T M12L64322A-7T |
512K x 32 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
ETC
|
| M52S64322A-10BG M52S64322A M52S64322A-7.5BG |
512K x 32 Bit x 4 Banks Mobile Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| IC42S16101 IC42S16101-5BG IC42S16101-5BIG IC42S161 |
512K x 16 Bit x 2 Banks (16-MBIT) SDRAM
DYNAMIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| M12L64322A-6TG M12L64322A-5BG |
512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 4.5 ns, PBGA90
|
Elite Semiconductor Memory Technology, Inc.
|
| MBM29LV004TC-12 MBM29LV004TC-90PNS MBM29LV004TC-70 |
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 120 ns, PDSO40
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 70 ns, PDSO40
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 90 ns, PDSO40
IC, LN PWR DC2DC CONVERT 48VDC-5VDC 1.2A MFR
4M (512K X 8) BIT
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| MT6V16M16 MT6V16M18 |
512K x 16 x 32 banks RDRAM(512K x 16 x 32同步动态RAM)
512K x 18 x 32 banks RDRAM(512K x 18 x 32同步动态RAM)
|
Micron Technology, Inc.
|
| W9864G2IB |
512K × 4 BANKS × 32BITS SDRAM
|
Winbond
|
