PART |
Description |
Maker |
1Z330 1Z390 1Z110 |
Silicon diffused type zener diode. Typ zener voltage 330 V. Silicon diffused type zener diode. Typ zener voltage 390 V. Silicon diffused type zener diode. Typ zener voltage 110 V.
|
Panasonic
|
SKDH146-L100 SKDH146_12-L100 SKDH146_16-L100 SKDH1 |
MOSFET; ID (A): 0.03; VDS (V): 6; Pch : 0.25; |yfs| (S) typ: 29/29; PG (dB) typ: 30/30; Ciss (pF) typ: 2.1/2.1; NF (dB) typ: 1.1/1.1; IDSS (mA): Package: CMPAK-6 3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
EA401 EA404 EA406 EA432 EA430 EA444GR EA444GY EA33 |
Red, right angle, quad-level, mini LED. Lens diffused. Max.luminous intensity at 10mA 12.5mcd. Typ. forward voltage at 20mA 2.0V. Yellow, right angle, quad-level, mini LED. Lens diffused. Max.luminous intensity at 10mA 5.0mcd. Typ. forward voltage at 20mA 2.1V. Green, right angle, quad-level, mini LED. Lens diffused. Max.luminous intensity at 10mA 5.0mcd. Typ. forward voltage at 20mA 2.2V. Ultra bright green, right angle, quad LED. Lens diffused. Max.luminous intensity at 20mA: 60.0mcd. Typ. forward voltage at 20mA 2.2V. Ultra bright red, right angle, quad LED. Lens diffused. Max.luminous intensity at 20mA: 300.0mcd. Typ. forward voltage at 20mA 1.85V. Red & green, right angle, quad-level, mini LED. Lens white diffused. Max.luminous intensity at 10mA: 32.0mcd(red), 32.0mcd(green). Typ. forward voltage at 20mA: 2.0V(red), 2.2V(green). Green & yellow, right angle, quad-level, mini LED. Lens white diffused. Max.luminous intensity at 10mA: 32.0mcd(green), 20.0mcd(yellow). Typ. forward voltage at 20mA: 2.2V(green), 2.2V(yellow). Red, right angle, tri-level, T-1, LED. Lens diffused. Max.luminous intensity at 20mA 50mcd. Typ. forward voltage at 20mA 2.0V. Orange side viewing LED. Lens translucent. Typ.luminous intensity at 15mA 4.0mcd. Typ. forward voltage at 20mA 2.1V. Green side viewing LED. Lens translucent. Typ.luminous intensity at 15mA 4.0mcd. Typ. forward voltage at 20mA 2.1V. Ultra bright red, right angle, T-1 LED. Lens translucent. Max.luminous intensity at 20mA 500mcd. Typ. forward voltage at 20mA 1.85V.
|
Gilway Technical Lamp
|
U1BC44 U1GC44 U1JC44 |
RECTIFIER SILICON DIFFUSED JUNCTION TYPE FOR HYBRID USE TOSHIBA RECTIFIER SILICON DIFFUSED JUNCTION TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
S7978 |
MOSFET, Switching; VDSS (V): -60; ID (A): -40; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: 0.033; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 25; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
SKD146-L100 SKD146_12-L100 SKD146_16-L100 SKD146/1 |
Transistor; Type: Amplifiers/Bipolar; VCEO (V): 12; Ic (A): 0.075; Pc (W): 0.7; hFE: 100 to 200; fT (GHz) typ: 7.8; Cob (pF) max: 0.9; NF (dB) typ: 1; Package: MPAK Transistor; Type: Amplifiers/Bipolar; VCEO (V): 4; Ic (A): 0.035; Pc (W): 0.05; hFE: 70 to 150; fT (GHz) typ: 20; Cob (pF) max: 0.15; NF (dB) typ: 1.15; Package: CMPAK-4 3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
U05NH44 U05TH44 |
RECTIFIER SILICON DIFFUSED TYPE
|
Shenzhen Taychipst Electronic Co., Ltd
|
1R5JZ41 1R5NZ41 |
Rectifier Silicon Diffused Type
|
TOSHIBA
|
1S1829 1S1886 |
RECTIFIER SILICON DIFFUSED TYPE
|
TOSHIBA
|
S5688G |
(S5688x) Rectifier Silicon Diffused Type
|
Toshiba Semiconductor
|
05J4B48 05B4B48 05G4B48 05J.B48 |
Silicon Diffused Type Rectifier Stack
|
GOOD-ARK[GOOD-ARK Electronics]
|
12F10B |
6,12 and 16 Amp Diffused Silicon Rectifier Diodes 6,126安培扩散硅整流二极管
|
International Rectifier, Corp.
|