| PART |
Description |
Maker |
| 2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor
25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz
BJT
2000-2400 MHz, Class C, Common Base; fO (MHz): 2100; P(out) (W): 25; P(in) (W): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
Microsemi, Corp.
|
| 2124-12L |
12 W, 22 V, 2200-2400 MHz common base transistor
2000-2400 MHz, Class C, Common Base; fO (MHz): 2400; P(out) (W): 12; P(in) (W): 2.25; Gain (dB): 7.5; Vcc (V): 22; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
12 Watts, 22 Volts, Class C Microwave 2200 - 2400 MHz
|
Microsemi, Corp.
GHZTECH[GHz Technology]
ETC[ETC]
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| SD1536-03 |
Air DME 1025-1150 MHz, Class C, Common Base, Pulsed; P(out) (W): 90; P(in) (W): 13; Gain (dB): 8.4; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 1; Case Style: M115 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| MRF517 |
Small Signal, Up to 1 GHz, Class A, Common Emitter; fO (MHz): 0; fT (MHz): 3000; GNF (dB): 10; VCE (V): 15; IC (mA): 60; NF min (dB): 2.5; Case Style: TO-39 UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-39
|
Microsemi, Corp.
|
| UMC3NT1 UMC3NT2 UMC5NT1G UMC3NT2G |
Dual Common Base-Collector Bias Resistor Transistors
Dual Common Base−Collector Bias Resistor Transistors 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
Rectron Semiconductor
|
| 1618-35 |
35 W, 28 V, 1600-1800 MHz common base transistor
35 Watt - 28 Volts, Class C Microwave 1600 - 1800 MHz
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 12A I(C) | FO-57DVAR 晶体管|晶体管|叩| 45V的五（巴西）总裁| 12A条一c）|7DVAR
|
GHZTECH[GHz Technology]
Fairchild Semiconductor, Corp.
|
| TCS450 |
450 Watts, 45 Volts, Pulsed Avionics 1030 MHz
TCAS 1030 MHz, Class C, Common Base, Pulsed; P(out) (W): 450; P(in) (W): 100; Gain (dB): 6.5; Vcc (V): 45; Pulse Width (µsec): 32; Duty Cycle (%): 2; Case Style: 55KT-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
MICROSEMI POWER PRODUCTS GROUP
GHz Technology
Microsemi, Corp.
|
| 1214-370V |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 370; P(in) (W): 50; Gain (dB): 8.7; Vcc (V): 50; Pulse Width (µsec): 330; Duty Cycle (%): 10; Case Style: 55ST-1 RF POWER TRANSISTOR
370 Watts - 50 Volts, 330 μs, 10% Radar 1200 - 1400 MHz
|
STMicroelectronics N.V.
Microsemi Corporation
|
| FD2046 |
10 BASE-T, SIL FILTER (WITH 2 COMMON CHOKE)
|
Bothhand USA, LP.
|
| EPE6030 |
10 Base-T Module with Enhanced Common Mode Attenuation
|
PCA ELECTRONICS INC.
|
| DB-55035S-175 DB-57060S-526 SD1274-01 DB-55015-165 |
HF to 2000 MHz Class AB Common Source - PowerSO-10RF
|
ETC
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
http://
|
| 1719-8 |
8 W, 28 V, 1700-1900 MHz common base transistor
BJT
|
GHz Technology
|
|
