| PART |
Description |
Maker |
| SCPHN20 SCPHN26 SCPHN10 SCPHN16 SCPHN30 SCPHN6 |
High Voltage,High Current,High Density Standard Recovery Rectifier(????靛?16000V锛?俯搴?5???骞冲??存??垫?5.5A,楂??锛?ぇ?垫?,楂??搴??????㈠??存???
5.5 A, 16000 V, SILICON, RECTIFIER DIODE
High Voltage,High Current,High Density Standard Recovery Rectifier(反向电压6000V，温5℃时平均整流电流5.5A,高压，大电流,高密度，标准恢复整流
STANDARD RECOVERY HIGH VOLTAGE, HIGH CURRENT RECTIFIER
|
Semtech Corporation
|
| CMPD2004S CMPD2003 CMPD2003C CMPD2003S CMPD2004 CM |
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE
SMD Switching Diode Dual: High Voltage: Common Anode
|
CENTRAL[Central Semiconductor Corp]
|
| BAS70-07W BAS7007W Q62702-A1186 |
Silicon Schottky Diode (General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BY559X-1500U |
Damper diode fast, high-voltage 1500 V, SILICON, RECTIFIER DIODE, TO-220
Damper diode ultra fast, high-voltage
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| JHV3680 JHV36 JHV3612 JHV3616 JHV3620 JHV3624 JHV3 |
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 54; IFSM (A): 1200; Vrwm (V): 28000; IR (µA): 6000; SILICON, VOLTAGE MULTIPLIER DIODE
HIGH VOLTAGE RECTIFIER ASSEMBLY
|
MICROSEMI[Microsemi Corporation]
|
| RM900DB-90S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM600DG-130S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM200DG-130S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM1200HE-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| UX-F5B |
High Frequency and High Voltage Rectifier Diode
|
Sanken electric
|
