PART |
Description |
Maker |
S8119 |
MOSFET, Switching; VDSS (V): 60; ID (A): 1.5; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.173]; RDS (ON) typ. (ohm) @2.5V: 0.207; Ciss (pF) typ: 200; toff (µs) typ: 0.035; Package: MPAK 图片集成电路光开
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Hamamatsu Photonics K.K.
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S7686 |
MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.14; RDS (ON) typ. (ohm) @4V[4.5V]: 0.2; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 10.8; Package: DPAK (L)- (2)
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Hamamatsu Photonics
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STP9N65M2 STD9N65M2 STF9N65M2 |
Extremely low gate charge N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220FP package N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in DPAK package N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220 package
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STMicroelectronics ST Microelectronics
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STW15N95K5 STF15N95K5 STP15N95K5 |
N-channel 950 V, 0.41 Ohm typ., 12 A SuperMESH(TM) 5 Power MOSFET in TO-247 package N-channel 950 V, 0.41 Ohm typ., 12 A SuperMESH(TM) 5 Power MOSFET in TO-220FP package N-channel 950 V, 0.41 Ohm typ., 12 A SuperMESH(TM) 5 Power MOSFET in TO-220 package
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ST Microelectronics
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STD1HN60K3 STU1HN60K3 |
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in DPAK package N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in IPAK package
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ST Microelectronics
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IP78M12A-LCC4 IP78M12-LCC4 IP78M15A-LCC4 IP78M15-L |
0.5 AMP Positive Voltage Regulator In Ceramic Surface Mount Package(0.5 A ,5V绋冲????剁?琛ㄨ创灏??)) Voltage Regulator 电压调节 0.5 AMP POSITIVE VOLTAGE REGULATOR IN A CERAMIC SURFACE MOUNT PACKAGE 15 V FIXED POSITIVE REGULATOR, CQCC18 0.5 AMP Positive Voltage Regulator In Ceramic Surface Mount Package(0.5 A ,15V稳压陶瓷表贴封装)) 0.5安培正电压稳压器在陶瓷表面贴装封装(0.5甲,15V的稳压器(陶瓷表贴封装) 0.5 AMP POSITIVE VOLTAGE REGULATOR IN A CERAMIC SURFACE MOUNT PACKAGE 5 V FIXED POSITIVE REGULATOR, CQCC18 Power Resistor; Series:TWW; Resistance:15ohm; Resistance Tolerance: /- 5 %; Power Rating:5W; Voltage Rating:350V; Temperature Coefficient:400ppm/ C 0.5 AMP Positive Voltage Regulator In Ceramic Surface Mount Package(0.5 A ,12V稳压陶瓷表贴封装)) 0.5 AMP Positive Voltage Regulator In Ceramic Surface Mount Package(0.5 A ,5V稳压陶瓷表贴封装)) 0.5 AMP Positive Voltage Regulator In Ceramic Surface Mount Package(0.5 A ,12V绋冲????剁?琛ㄨ创灏??))
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Honeywell International, Inc. TT electronics Semelab, Ltd. TT electronics Semelab Limited Semelab(Magnatec) SEME-LAB[Seme LAB] SEMELAB LTD
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CAT28C64BHP-20 CAT28C64BHN-15 CAT28C64BHT-20 CAT28 |
PROFET - Smart High Side Switches XWAY ADM6993 RF Switches; Package: PG-TSLP-7; P-0.1dB(min): 21.0 dBm; Switching Time(max): 4.0 µs; Isolation @1GHz: 32.0 dB; Insertion Loss @1GHz: 0.4 dB; Pmax: 21.0 dBm HITFET, TEMPFET - Smart Low-Side Switches IGBT Modules up to 1200V SixPACK; Package: AG-EASY2B-1; IC (max): 50.0 A; VCE(sat) (typ): 1.85 V; Configuration: SixPACK; Technology: IGBT4; Housing: EasyPACK 2B; IGBT Modules up to 6500V Single; Package: A-IHV130-3; IC (max): 400.0 A; VCE(sat) (typ): 4.3 V; Configuration: Single; Technology: IGBT2 Standard; Housing: IHV 130 mm; Single: N-Channel 600V MOSFETs; Package: PG-TO262-3; Technology: CoolMOS; VDS (max): 600.0 V; RDS (on) (max) (@10V): 105.0 mOhm; ID (max): 31.0 A; RthJC (max): 0.5 K/W; XWAY ADM5120P Medium Power IF max = 500mA; Package: PG-SOT363-6; Configuration: Single; VR (max): 30.0 V; IF (max): 2,000.0 mA; CT (max): 60.0 pF; VF (max): 600.0 mV; X-GOLD213 - PMB8810 UMTS LNA; Package: PG-TSLP-16; Frequency Hz: 800 MHz 1900 MHz 2100 MHz; Gain (typ): 15.2 dB 16.5 dB 16.5 dB; F (typ): 1.2 dB 1.0 dB 1.1 dB; P-1dB (in): -12 -10 -11; I (typ): 3.5 mA 3.4 mA 3.5 mA; SPOC - SPI Power Controller for Advanced Light Control; Package: PG-DSO-36; Channels: 5.0; LED mode: No; Cranking mode: No; Watchdog: No; Over Voltage Protection: 41.0 V IGBT Modules up to 1200V SixPACK; Package: AG-ECONO2-1; IC (max): 75.0 A; VCE(sat) (typ): 1.85 V; Configuration: SixPACK; Technology: IGBT4; Housing: EconoPACK 2; 128Kx8 EEPROM 128Kx8 EEPROM ADM3120BX x8的EEPROM IGBT Modules up to 6500V Single; Package: A-IHV130-3; I<sub>C </sub>(max): 400.0 A; V<sub>CE(sat)</sub> (typ): 4.3 V; Configuration: Single; Technology: IGBT2 Standard; Housing: IHV 130 mm;
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Honeywell International, Inc. NXP Semiconductors N.V. Infineon Technologies AG Amphenol, Corp. Vectron International, Inc. Advanced Analogic Technologies, Inc.
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STW57N65M5 STI57N65M5 STP57N65M5 STB57N65M5 |
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh(TM) V Power MOSFET in D2PAK package N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET N-channel 650 V, 0.056 Ω typ., 42 A MDmesh V Power MOSFET in I2PAK, TO-220, TO-220FP and D2PAK packages
|
ST Microelectronics STMicroelectronics
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STF6N80K5 STFI6N80K5 |
N-channel 800 V, 1.3 Ohm typ., 4.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220FP package N-channel 800 V, 1.3 Ohm typ., 4.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in I2PAKFP package
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ST Microelectronics
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STH260N6F6-2 |
N-channel 60 V, 1.7 mOhm typ., 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package N-channel 60 V, 1.7 mΩ typ., 180 A STripFET VI DeepGATE Power MOSFET in H2PAK-2 package
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ST Microelectronics STMicroelectronics
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