| PART |
Description |
Maker |
| 1214-30 |
30 W, 28 V, 1200-1400 MHz common base transistor
30 Watts, 28 Volts, Pulsed Radar 1200 - 1400 MHz
BJT
|
GHZTECH[GHz Technology]
|
| 1214-300 |
300 Watts - 50 Volts, 100us, 10% Radar 1200 1400 MHz
|
ADPOW[Advanced Power Technology]
|
| 1214-300 |
300 W, 50 V, 1200-1400 MHz common base transistor
BJT
|
GHz Technology
|
| LH-FSLH-S130C-0406A FSLH-S130C |
2012 Size 1200/1400 MHz Chip Multilayer Splitter/Combiner
|
HITACHI-METALS[Hitachi Metals, Ltd]
|
| PH1214-25L |
1200-1400 MHz,25 W, 300 ms pulse,radar pulsed power transistor
|
MA-Com
|
| 1214-800P |
800 Watts - 300μs, 10%, 50V L-Band Pulsed Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
| HVV1214-025 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty for Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| MAGX-001214-SB0PPR MAGX-001214-125L00 MAGX-001214- |
GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 1200-1400 MHz, 300μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| CGHV14250-TB CGHV14250F CGHV14250F-AMP CGHV14250P |
250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
|
Cree, Inc
|
| AM50-0004 AM50-0004RTR AM50-0004SMB AM50-0004TR AM |
Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:25-35 RoHS Compliant: No
High Dynamic Range Low Noise Amplifier 1400-2000 MHz
High Dynamic Range Low Noise Amplifier 1400-2000 MHz
|
MACOM[Tyco Electronics]
|
| TSA5522MDK-T TSA5522TD-T |
PLL FREQUENCY SYNTHESIZER, 1400 MHz, PDSO20
PLL FREQUENCY SYNTHESIZER, 1400 MHz, PDSO16
|
NXP SEMICONDUCTORS
|
| ADP-ED9774/2 |
5 MHz - 1400 MHz RF/MICROWAVE COMBINER, 0.7 dB INSERTION LOSS CASE CD542, 6 PIN
|
Mini-Circuits
|
