| PART |
Description |
Maker |
| HCPL-901J HCPL-900J HCPL-9031 HCPL-902J HCPL-9030 |
SPECIAL
HCPL-0931 · High Speed Digital Isolator
HCPL-0930 · High Speed Digital Isolator
HCPL-092J · High Speed Digital Isolator
HCPL-091J · High Speed Digital Isolator
HCPL-090J · High Speed Digital Isolator
HCPL-0900 · High Speed Digital Isolator
HCPL-9000 · High Speed Digital Isolator
HCPL-9030 · High Speed Digital Isolator
HCPL-902J · High Speed Digital Isolator
HCPL-9031 · High Speed Digital Isolator
HCPL-900J · High Speed Digital Isolator
HCPL-901J · High Speed Digital Isolator
|
Agilent (Hewlett-Packard)
|
| BUX81 |
HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR
|
Seme LAB
|
| BUX82 |
HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR
|
Seme LAB
|
| 2N6032 2N6033 |
HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTORS
|
ETC
GESS[GE Solid State]
|
| 2SC2614 |
HIGH VOLTAGE, HIGH SPEED AND HIGH POWER SWITCHING
|
Unknow
ETC[ETC]
List of Unclassifed Manufacturers
|
| 2N2222ADCSM |
High Speed Medium Power NPN Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、开关型NPN晶体管（高可靠性、陶瓷表贴封装）)
DUAL HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| ADM222 ADM222AN ADM222AR ADM232A ADM232AAN ADM232A |
High Speed, 5 V, 0.1 uF CMOS RS-232 Drivers/Receivers
High Speed/ 5 V/ 0.1 uF CMOS RS-232 Drivers/Receivers
High Speed. 5 V. 0.1 uF CMOS RS-232 Drivers/Receivers 高速5.1超滤的CMOS的RS - 232驱动接收
5V High-Speed RS-232 Transceivers with 0.1uF Capacitors 5V的高速RS - 232收发器与0.1uF电容
LED GREEN DIFFUSED 1X5MM RECT DUAL LINE TRANSCEIVER, PDSO16
|
http://
AD[Analog Devices]
Analog Devices, Inc.
ANALOG DEVICES INC
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
