| PART |
Description |
Maker |
| PHW8ND50E PHB8ND50E PHP8ND50E |
PowerMOS transistors FREDFET, Avalanche energy rated
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHP6ND50E PHB6ND50E |
PowerMOS transistors FREDFET, Avalanche energy rated
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHP10N40E |
PowerMOS transistors Avalanche energy rated
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHW11N50E PHB11N50E |
PowerMOS transistors Avalanche energy rated
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHU2N50E |
PowerMOS transistors Avalanche energy rated
|
Philips Semiconductors
NXP Semiconductors
|
| PHX4N40E |
PowerMOS transistors Avalanche energy rated
|
NXP Semiconductors
Philips Semiconductors
|
| PHX6N50E |
PowerMOS transistors Avalanche energy rated
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHP6N50E PHB6N50E |
PowerMOS transistors Avalanche energy rated
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PHX7N40E |
PowerMOS transistors Avalanche energy rated
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| APT4012BVFR APT4012SVFR APT4012BVFRG |
Power FREDFET; Package: TO-247 [B]; ID (A): 37; RDS(on) (Ohms): 0.12; BVDSS (V): 400; 37 A, 400 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
POWER MOS V FREDFET
|
Microsemi, Corp.
Advanced Power Technology
|
| BUK444-200 BUK444-200A BUK444-200B BUK444 |
PowerMOS transistor 功率金属氧化物半导体晶体
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 200V; Case Size: 16x20 mm; Packaging: Bulk
PowerMOS transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| APT14F100B APT14F100S |
N-Channel FREDFET 1000V, 14A, 1.00Ω Max, trr ?40ns
N-Channel FREDFET 1000V, 14A, 1.00ヘ Max, trr ÷240ns
|
Microsemi Corporation
|
