| PART |
Description |
Maker |
| AP2614GY-HF |
Capable of 2.5V Gate Drive, Lower On-resistance
|
Advanced Power Electronics Corp.
|
| AP90T03GS |
Lower On- resistance, Simple Drive Requirement
|
Advanced Power Electronics Corp.
|
| AP2314GN-HF |
Capable of 2.5V gate drive, Lower on-resistance
|
Advanced Power Electronics Corp.
|
| AP4226BGM-HF |
Lower On-resistance, Simple Drive Requirement
|
Advanced Power Electronics Corp.
|
| AP6679GR AP6679GR-14 |
Lower On-resistance, Simple Drive Requirement
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| AP9567GH-HF AP9567GH-HF14 AP9567GJ-HF |
Lower On-resistance, Simple Drive Requirement, Fast Switching Characteristic
|
Advanced Power Electronics Corp.
|
| AP99T06GP-HF AP99T06GP-HF-14 |
Simple Drive Requirement, Lower On-resistance, Fast Switching Characteristic
|
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| AP4407GS AP4407GP |
50 A, 30 V, 0.014 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
Lower On-resistance, Simple Drive Requirement
|
Advanced Power Electronics Corp.
|
| AP30T03GH-HF AP30T03GH-HF-14 |
Lower Gate Charge Lower Gate Charge
17 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Simple Drive Requirement
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| K7N803601B K7N803649B-QC25 DS_K7N803601B K7M801825 |
512Kx36 & 1Mx18 Pipelined NtRAM
256Kx36 & 512Kx18-Bit Flow Through NtRAM
256Kx36 & 512Kx18-Bit Pipelined NtRAMTM
THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:5R; Tolerance, resistance:20%; Beta value:2800; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Case RoHS Compliant: Yes
256Kx36 & 512Kx18-Bit Pipelined NtRAM 256Kx36
|
http://
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| IRFZ46N-002 E-018 IRF540N-006 IRF540N-004 IRF540N- |
46 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 60 V, 0.023 ohm, N-CHANNE
81 A, 60 V, 0.012 ohm, N-CHANNE
27 A, 100 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
72 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
98 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
21 A, 150 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
46 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
VISHAY INTERTECHNOLOGY INC
|
|
