PART |
Description |
Maker |
APT60GU30B APT60GU30S |
MOSFET POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
APT25GP90BDF1 |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT50GP60J |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT50GP60B2DF2 |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT45GP120J |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT11GP60BDQB |
POWER MOS 7 IGBT MOSFET
|
Advanced Power Technolo... Advanced Power Technology
|
APT6010B2LL APT6010LLL APT6010LLLG APT6010B2LLG |
54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7 MOSFET
|
Microsemi Corporation
|
UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET MOS Field Effect Transistor SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE 10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
APT20M11JVR |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 175A 0.011 Ohm
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
APT30GP60B |
POWER MOS 7 IGBT MOSFET
|
Advanced Power Technolo... Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT5010LLC APT5010B2LC APT5010B2LC-06 |
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. POWER MOS VI 500V 47A 0.100 Ohm
|
Advanced Power Technolo... Advanced Power Technology Ltd.
|
APT65GP60L2DQ2 APT65GP60L2DQ2G |
POWER MOS 7 IGBT
|
http:// Advanced Power Technology
|