| PART |
Description |
Maker |
| PJ2N3904CT PJ2N3904CX PJ2N3904 |
60V; 200mA NPN epitaxial silicon transistor
|
PROMAX-JOHNTON
ETC[ETC]
List of Unclassifed Manufacturers
|
| FMBT390411 |
200mA Silicon NPN Epitaxial Planar Transistor
|
Formosa MS
|
| 2SA1469 2SC3746 |
PNP Epitaxial Planar Silicon Transistors 60V/5A High-Speed Switching Applications
PNP/NPN Epitaxial Planar Silicon Transistors
|
Sanyo
|
| MMST390411 MMST3904-TP |
NPN Small Signal Transistors
TRANSISTOR NPN 40V 200MA SOT323
|
Micro Commercial Components
http://
|
| CMBD4148 CMBD1201 CMBD1202 CMBD1203 CMBD1204 CMBD1 |
0.250W SMD Single Switching Diode , 75.0V Vr, 5.000uA Ir, 1.05V Vf @ 200mA If
0.250W SMD Dual Switching Diode , 75.0V Vr, 5.000uA Ir, 1.05V Vf @ 200mA If
SILICON PLANAR EPITAXIAL HIGH SPEED DIODES
|
CDIL[Continental Device India Limited]
|
| 151-05 151-08 151-07 151-09 152-05 164-18 164-04 1 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 6A I(C) | TO-82
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 6A I(C) | TO-82
晶体管|晶体管|叩| 100V的五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 180V五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管| npn型| 140伏特五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 50V五（巴西）总裁| 6A条一c）|2
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 100V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一c）| STR-5/16
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 50V五（巴西）总裁|甲一（c）| STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 70V的五（巴西）总裁|甲一（c）| STR-5/16
|
Samsung Semiconductor Co., Ltd.
Molex, Inc.
Intel, Corp.
|
| PU4120 PU4120P PU4120Q |
V(cbp): 60V; V(ceo): 60V; V(ebo): 5V; 15W; silicon NPN triple-diffused planar darlington transistor array
(PU4120 / PU4420) SILICON NPN TRIPLE-DIFFUSED PLANAR DARLINGTON TYPE
|
Panasonic Semiconductor
|
| KRC886T KRC881T KRC882T KRC883T KRC884T KRC885T KR |
Built in Bias Resistor
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)
(KRC881T - KRC886T) EPITAXIAL PLANAR NPN TRANSISTOR
300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| CMKT3920 |
SURFACE MOUNT SILICON DUAL, SMALL SIGNAL NPN SWITCHING TRANSISTOR
50V, 200mA Dual, NPN Transistors in SOT-363 package
|
Central Semiconductor Corp
|
| LTC3544B |
Quad Synchronous Step-Down Regulator: 2.25MHz, 300mA, 200mA, 200mA, 100mA
|
Linear Technology
|
| LTC4263IDE-TR LTC3544BEUD LTC3544BEUD-PBF LTC4263I |
Quad Synchronous Step-Down Regulator: 2.25MHz, 300mA, 200mA, 200mA, 100mA
|
Linear Technology
|
