| PART |
Description |
Maker |
| MRF18030BR3 MRF18030BSR3 MRF1803BR3 MRF1803BSR3 MR |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS
|
Motorola, Inc
|
| MHVIC915R2 |
CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier
|
Motorola
|
| PD60-0004--05S PD60-0004-05S |
High Power5 Channel Transmit Combiner for AMPS/GSM/IS-95 高功率，5频道传输合路的AMPS/GSM/IS-95
High Power锛?5 Channel Transmit Combiner for AMPS/GSM/IS-95
|
|
| MF1043S-1 |
FOR GSM MOBILE TELEPHONE / Rx
FOR GSM MOBILE TELEPHONE, Rx
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MHVIC915R2_D MHVIC915 MHVIC915R2 MHVIC915R2/D |
MHVIC915R2 CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier
746-960 MHz RF LDMOS Wideband Integrated Power Amplifier
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| SKY12143-315 |
HIP3 Variable Attenuator for AMPS and GSM Base Stations
HIP3⑩ Variable Attenuator for AMPS and GSM Base Stations
|
Skyworks Solutions Inc.
|
| MRF9100R3 MRF9100 MRF9100SR3 |
GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF9100, MRF9100R3, MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| B39251B3893H310 |
SAW IF filter GSM
|
EPCOS
|
| PMB2240 |
GSM-Transmitter
|
Siemens Semiconductor Group
|
| CMD106 |
GSM Duplexer
|
API Technologies Corp
|
| CXG1121TN |
SP4T GSM/GPRS Dual-Band Antenna Switch Logic
SP4T GSM/GPRS Dual-Band Antenna Switch Logic SP4T的GSM / GPRS双频天线开关逻辑
|
Sony Corporation
Sony, Corp.
|
