Part Number Hot Search : 
GH17M 333ML 18TRU OP260GS STPS20 2SA1694 MAX4890 E003931
Product Description
Full Text Search

APT6011B2VFR - POWER MOS V 600V 49A 0.110 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT6011B2VFR_1066732.PDF Datasheet


 Full text search : POWER MOS V 600V 49A 0.110 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.


 Related Part Number
PART Description Maker
APT6011B2VFR POWER MOS V 600V 49A 0.110 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Advanced Power Technology
APT6030BN APT6033BN POWER MOS IV 600V 22.0A 0.33 Ohm / 600V 23.0A 0.30 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
ADPOW[Advanced Power Technology]
APT6035SVR APT10088HVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 600V 18A 0.350 Ohm
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
APT6030 APT6030BVFR POWER MOS V 600V 21A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW[Advanced Power Technology]
APT6027HVR POWER MOS V 600V 20A 0.270 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW[Advanced Power Technology]
APT6017B2LL APT6017LLL POWER MOS 7 600V 35A 0.170 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Advanced Power Technology
APT60M60JFLL POWER MOS 7 600V 70A 0.060 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Advanced Power Technology
APT6017JLL Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 31A 0.170 Ohm
Advanced Power Technology
APT6029BLL POWER MOS 7 600V 21A 0.290 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Advanced Power Technology
NP109N04PUJ NP109N04PUJ-E1B-AY NP109N04PUJ-E2B-AY MOS FIELD EFFECT TRANSISTOR
110 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics Corporation
 
 Related keyword From Full Text Search System
APT6011B2VFR international APT6011B2VFR Microelectronic APT6011B2VFR DIFFERENTIAL CLOCK APT6011B2VFR mos APT6011B2VFR watt
APT6011B2VFR ICPRICE APT6011B2VFR filetype:pdf APT6011B2VFR filetype:pdf APT6011B2VFR Bus APT6011B2VFR ptc data
 

 

Price & Availability of APT6011B2VFR

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.4261531829834