| PART |
Description |
Maker |
| APT60M75JFLL |
POWER MOS 7 600V 58A 0.075 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| APT4018HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 400V 22A 0.180 Ohm
|
Advanced Power Technology Ltd.
|
| APT4020BVR |
POWER MOS V 400V 23A 0.200 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT40M70JVR |
POWER MOS V 400V 53A 0.070 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT50M75B2LL APT50M75LLL |
POWER MOS 7 500V 57A 0.075 Ohm
|
Advanced Power Technology
|
| APT50M75JFLL |
POWER MOS 7 500V 52A 0.075 Ohm
|
Advanced Power Technology
|
| STD13003 |
Switching Bipolar Power Transistor |Power Transistor |400V 1.5A 1.2W HFE8~40 开关功率晶体管|功率晶体管| 400V 1.5A的功率为1.2W HFE840
NPN Silicon Power Transistor
|
AUK, Corp.
AUK[AUK corp]
|
| PVT442 PVT442S PVT442S-T |
400V 1 Form B Photo Voltaic Relay in a 6-pin SMT Package
Microelectronic Power IC HEXFET Power MOSFET Relay Single Pole, Normally Closed 0-400V, 170mA AC/DC
|
International Rectifier
|
| IRFI740G IRFI740 IRFI740GPBF |
400V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=5.4A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=400V/ Rds(on)=0.55ohm/ Id=5.4A)
|
IRF[International Rectifier]
|
| BUZ101SL-4 |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
http://
Siemens Semiconductor Group
Infineon Technologies AG
SIEMENS AG
|
