| PART |
Description |
Maker |
| BAV70 Q68000-A6622 |
Silicon Switching Diode Array (For high-speed switchingFor high-speed switching) 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 1N4148WS |
High Speed Switching Diode Fast Switching Speed Automatic Insertion
|
First Components International
|
| BUP410D Q67040-A4425-A2 |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125
|
Siemens Semiconductor Group
SIEMENS AG
|
| 1SS397 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
| IS7-1845ASRH-8 IS1-1845ASRH/PROTO IS7-1845ASRH/PRO |
Circular Connector; MIL SPEC:MIL-C-5015 A/B/C; Body Material:Aluminum Alloy; Series:MS3102; No. of Contacts:5; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No
Single Event Radiation Hardened High Speed, Current Mode PWM 1 A SWITCHING CONTROLLER, 500 kHz SWITCHING FREQ-MAX, CDIP8
CONNECTOR ACCESSORY 1 A SWITCHING CONTROLLER, 500 kHz SWITCHING FREQ-MAX, DFP18
|
Intersil Corporation
Intersil, Corp.
|
| 2SC3970 2SC3970A |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 1.5 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220F
|
Panasonic, Corp.
Panasonic Corporation
Panasonic Semiconductor
|
| 1SS199 1SS199MHD |
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching 硅肖特基二极管各种探测器，高速开
Silicon Schottky Barrier Diode for Various Detector High Speed Switching
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| BAR74 Q62702-F704 |
From old datasheet system
Silicon Switching Diode (For high-speed switching)
|
SIEMENS[Siemens Semiconductor Group]
|
| BAV99HMFH |
Switching Diode (High speed switching) (corresponds to AEC-Q101)
|
ROHM
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| Q62702-A1030 BAV70W |
From old datasheet system
SILICON SWITCHING DIODE ARRAY (FOR HIGH SPEED SWITCHING APPLICATIONS COMMON CATHODE)
|
Siemens Semiconductor Group
SIEMENS AG
|
