PART |
Description |
Maker |
K7A203200B-QCI14 K7A203200B-QC14 K7A203600B-QCI14 |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36 512Kx16 bit Low Power Full CMOS Static RAM 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36-Bit Synchronous Pipelined Burst SRAM
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Cypress Semiconductor, Corp. Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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IDT71T75802 IDT71T75802S100BG IDT71T75802S100BGI I |
512K x 36, 1M x 18 2.5V Synchronous ZBT⑩ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 512K X 36, 1M X 18 2.5V SYNCHRONOUS ZBT⒙ SRAMS 2.5V I/O, BURST COUNTER PIPELINED OUTPUTS 512K x 36 1M x 18 2.5V Synchronous ZBT SRAMs 2.5V I/O Burst Counter Pipelined Outputs 512K x 36, 1M x 18 2.5V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
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IDT[Integrated Device Technology]
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CY7C1304DV25-167BZC CY7C1304DV25-167BZI CY7C1304DV |
9-Mbit Burst of 4 Pipelined SRAM with QDR Architecture 9-Mbit Burst of 4 Pipelined SRAM with QDR⑩ Architecture
|
Cypress Semiconductor
|
W25P240A W25P240A-6 W25P240A-6A W25P240AF-6 W25P24 |
From old datasheet system 64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM 64K*32 high speed, low power synchronous-burst pipelined CMOS static RAM
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Winbond Electronics Corp WINBOND[Winbond]
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CY7C1304CV25-100BZC CY7C1304CV25-167BZC CY7C1304CV |
9-Mbit Burst of 4 Pipelined SRAM with QDR(TM)Architecture 9-Mbit Burst of 4 Pipelined SRAM with QDR垄芒 Architecture 9-Mbit Burst of 4 Pipelined SRAM with QDR Architecture 9-Mbit Burst of 4 Pipelined SRAM with QDR?/a> Architecture
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Cypress Semiconductor
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IDT71V2576S IDT71V2576S133BG IDT71V2576S133BGI IDT |
3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/2.5V I/O 3.3V 256K x 18 Synchronous PipeLined Burst SRAM w/2.5V I/O 128K X 36/ 256K X 18 3.3V Synchronous SRAMs 2.5V I/O/ Pipelined Outputs/ Burst Counter/ Single Cycle Deselect 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 256K X 18 3.3V Synchronous SRAMs 2.5V I/O Pipelined Outputs Burst Counter Single Cycle Deselect
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IDT[Integrated Device Technology]
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BBS-15 BBS-1/4 BBS-2/10 BBS-1-8/10 BBS-10 BBS-1-6/ |
72-Mbit QDR-II SRAM 2-Word Burst Architecture 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 72-Mbit DDR-II SRAM 2-Word Burst Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 36-Mbit QDR-II SRAM 4-Word Burst Architecture Fuse 256K (32K x 8) Static RAM 64/256/512/1K/2K/4K x 18 Synchronous FIFOs Low-Voltage 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs Neuron® Chip Network Processor 64-Kbit (8K x 8) Static RAM 72-Mbit QDR™-II SRAM 2-Word Burst Architecture 保险
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NXP Semiconductors N.V.
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AS7C251MPFS32_36A AS7C251MPFS36A-200TQIN AS7C251MP |
Sync SRAM - 2.5V 2.5V 1M x 32/36 pipelined burst synchronous SRAM 1M X 32 STANDARD SRAM, 3.8 ns, PQFP100 2.5V 1M x 32/36 pipelined burst synchronous SRAM 1M X 36 STANDARD SRAM, 3.8 ns, PQFP100 2.5V 1M x 32/36 pipelined burst synchronous SRAM 1M X 36 STANDARD SRAM, 3.1 ns, PQFP100 2.5V 1M x 32/36 pipelined burst synchronous SRAM 1M X 32 STANDARD SRAM, 3.5 ns, PQFP100
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Alliance Semiconductor ... ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor, Corp.
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IDTIDT71P71604167BQ IDTIDT71P71604200BQ IDTIDT71P7 |
18Mb Pipelined DDR⑩II SRAM Burst of 2
|
Integrated Device Technology
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