PART |
Description |
Maker |
MB84VD23280EA-90 MB84VD23280EA-90-PBS MB84VD23280E |
64M (x8/x16) FLASH MEMORY & 8M (x8/x16) STATIC RAM
|
Fujitsu Microelectronics FUJITSU[Fujitsu Media Devices Limited]
|
MB84SD23280E-70PBS MB84SD23280EFE-70 |
64M (X16) FLASH MEMORY 8M (X16) SRAM
|
AMD
|
MX28F640C3TXAC-90 MX28F640C3TTC-12 MX28F640C3TTI-1 |
64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 120 ns, PDSO48 64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 120 ns, PBGA48
|
Macronix International Co., Ltd.
|
M36DR432-ZAT M36DR432A100ZA6T M36DR432A100ZA6C M36 |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product 32兆位Mb x16插槽,双行,页闪存和4兆位256K x16的SRAM,多个存储产
|
意法半导 STMicroelectronics N.V.
|
MB84SF6H6H6L2-70PBS MB84SF6H6H6L2-70 |
3 Stacked MCP (Multi-Chip Package) FLASH & FLASH & FCRAM 128M (X16) Burst FLASH MEMORY & 128M (X16) Page/Burst Mobile FCRAM
|
SPANSION[SPANSION]
|
MB84VD22182EE-90-PBS MB84VD22184EE-90-PBS MB84VD22 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM Stacked MCP (multi-chip package) flash memory & SRAM 32M(x8/x16) flash memory & 4M(x8/x16) static RAM
|
Fujitsu Microelectronics
|
MB84VD22081EA-90-PBS MB84VD22082EA-90-PBS MB84VD22 |
32M (X 8/X16) FLASH MEMORY & 2M (X 8/X16) STATIC RAM Stacked MCP (multi-chip package) flash memory & SRAM 32M(x8/x16) flash memory & 2M(x8/x16) static RAM
|
Fujitsu Microelectronics
|
W29GL064CB7S W29GL064CH7B W29GL064CL7B W29GL064CT7 |
64M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
|
Winbond
|
AT49SN6416T AT49SN3208T AT49SN6416T-90CJ |
AT49SN6416(T)/3208(T) Advance Information [Updated 3/02. 38 Pages] 64M bit and 32M. 1.8-Volt Burst and Page Mode Flash Memory 4M X 16 FLASH 1.8V PROM, 90 ns, CBGA55
|
ATMEL CORP
|
MB84VD22281EA MB84VD22281EA-90-PBS MB84VD22281EE M |
32M (X 8/X16) FLASH MEMORY & 8M (X 8/X16) STATIC RAM POT 2.0K OHM 1/4 SQ CERM SL MT 32M (X 8/X16) FLASH MEMORY & 8M (X 8/X16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA71
|
Fujitsu Component Limited. Fujitsu Limited Fujitsu, Ltd.
|
NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位1千兆位(x8/x1628 Byte/264字的页面1.8V/3V,NAND闪存芯片 128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 64M X 8 FLASH 3V PROM, 35 ns, PBGA55 64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 128M X 8 FLASH 3V PROM, 35 ns, PDSO48 8M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PBGA55
|
ST Microelectronics 意法半导 STMicroelectronics N.V. NUMONYX http://
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