| PART |
Description |
Maker |
| ASI10593 HF10-12S |
NPN Silicon RF Power Transistor(Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)) HF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
|
| ASI10592 HF10-12F |
NPN Silicon RF Power Transistor(Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)) HF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| ISL9R1560G2 ISL9R1560S3S ISL9R1560P2 ISL9R1560S2 I |
15A, 600V StealthDiode 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-262
15A, 600V Stealth Diode
15A/ 600V Stealth Diode
15A, 600V Stealth⑩ Diode
15A, 600V Stealth Single Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| CFRM105-HF |
Halogen Free Fast Recovery Rectifiers, V-RRM=600V, V-R=600V, I-O=1A
|
Comchip Technology
|
| FFH50US60S |
50A, 600V StealthDiode 50 A, 600 V, SILICON, RECTIFIER DIODE, TO-247
50A, 600V Stealth⑩ Diode
50A, 600V Stealth Diode
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| CFRM105-G |
Fast Recovery Rectifiers, V-RRM=600V, V-R=600V, I-O=1A
|
Comchip Technology
|
| FCB20N60F12 |
600V N-Channe MOSFET 600V, 20A, 190mΩ
|
Fairchild Semiconductor
|
| X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9 |
:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes
max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes
THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt
:SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a
continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes
IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A
IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V
IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage
:SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V
IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic
MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2
RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO
DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm;
Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8
IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,
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http://
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| RHRD660S FN3746 RHRD660 |
6A, 600V Hyperfast Diodes(6A,600V 超快速二极管)
6A/ 600V Hyperfast Diodes
6A 600V Hyperfast Diodes
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| HGT1S7N60B3S HGTP7N60B3 HGT1S7N60B3S9A HGTD7N60B3S |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|7A一（c）|63AB
14A, 600V, UFS Series N-Channel IGBTs
|
Cypress Semiconductor, Corp.
Fairchild Semiconductor
|
| IRG4BC30K-S IRG4BC30KS IRG4BC30K-STRR |
600V UltraFast 8-25 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
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