PART |
Description |
Maker |
24LC256ESM 24LC256IP 24LC256ISM 24LC256EP 24AA256 |
256K I2C CMOS EEPROM 256K I 2 C CMOS Serial EEPROM 256K的I 2 C⑩的CMOS串行EEPROM 256KI2CCMOSSerialEEPROM
|
Microchip Technology, Inc. Microchip Technology Inc. MicrochipTechnology
|
AS29LV400 AS29LV400B-70TC AS29LV400B-70TI AS29LV40 |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 700ns access time 3V 512K x 8/256K x16 CMOS Flash EEPROM
|
Alliance Semiconductor List of Unclassifed Manufacturers
|
CAT28LV256HE30T CAT28LV256GA-25T CAT28LV256GA-30T |
32K X 8 EEPROM 3V, 250 ns, PQCC32 256K-Bit CMOS PARALLEL EEPROM
|
ON Semiconductor
|
79LV0832RPQK-20 79LV0832RT1QK-25 79LV0832RT2QK-20 |
CB 6C 6#16 SKT RECP WALL 8 Megabit (256K x 32-Bit) Low Voltage EEPROM MCM 256K X 32 EEPROM 3V, 250 ns, QFP96 8 Megabit (256K x 32-Bit) Low Voltage EEPROM MCM 256K X 32 EEPROM 3V, 200 ns, QFP96
|
Maxwell Technologies, Inc
|
HN58C256P-20 |
CMOS 256K EEPROM
|
ETC
|
AS29F200T-55SC AS29F200T-55SI AS29F200T-55TC AS29F |
5V 256K x 8/128K x 8 CMOS FLASH EEPROM 128K X 16 FLASH 5V PROM, 55 ns, PDSO44 5V 256K x 8/128K x 8 CMOS FLASH EEPROM 128K X 16 FLASH 5V PROM, 55 ns, PDSO48 5V 256K x 8/128K x 8 CMOS FLASH EEPROM 128K X 16 FLASH 5V PROM, 90 ns, PDSO48
|
Alliance Semiconductor, Corp.
|
MBM29LV400BC-70PFTN MBM29LV400BC-90PFTN MBM29LV400 |
FLASH MEMORY CMOS 4M (512K X 8/256K X 16) BIT IC,EEPROM,FLASH,256KX16/512KX8,CMOS,TSSOP,48PIN,PLASTIC
|
SPANSION[SPANSION] Fujitsu
|
28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
AT28C256-20UM/883 AT28C256F-20UM/883 AT28C256E-20U |
150NS, TSOP, IND TEMP, GREEN(EEPROM) 32K X 8 EEPROM 5V, 150 ns, PDSO28 256K (32K x 8) Paged Parallel EEPROM
|
聚兴科技股份有限公司 ATM Electronic, Corp. ATMEL Corporation
|
AT28BV256 AT28BV256-25SC AT28BV256-25JI AT28BV256- |
128Kx8 EEPROM 128Kx8 EEPROM 256K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt
|
Atmel, Corp.
|
IDT71V416YS15YGI IDT71V416YS IDT71V416YL10BEG IDT7 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位) 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
IDT[Integrated Device Technology] Integrated Device Technology, Inc.
|
CAT34WC02W-TE13 CAT34WC02Y-TE13 CAT34WC02Y-1.8TE13 |
MoBL® 2-Mbit (256K x 8) Static RAM MoBL® 8-Mbit (512K x 16) Static RAM MoBL2 4-Mb (256K x 16) Static RAM MoBL® 4-Mbit (256K x 16) Static RAM 5V, 3.3V, ISR High-Performance CPLDs Licorice Board (CY22150 Candy Board) EEPROM MoBL® 4-Mbit (512K x 8) Static RAM EEPROM MoBL2™ 4-Mb (256K x 16) Static RAM EEPROM MoBL® 2-Mbit (128K x 16) Static RAM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Bourns, Inc. 3M Company
|