| PART |
Description |
Maker |
| HN3G01J HN3G01 E002017 |
N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR
From old datasheet system
|
http://
Toshiba Semiconductor
|
| 2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss.
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
| UF3N25ZL-AA3-R |
N-CHANNEL JUNCTION FET
|
Unisonic Technologies
|
| STK596EF |
N-Channel Junction FET
|
AUK[AUK corp]
|
| 2SK303 |
Low-Frequency General-Purpose Amplifier Applications N-Channel Junction Silicon FET(用于低频通用放大器N沟道结型硅场效应 低频通用放大器应用N沟道结硅场效应管（用于低频通用放大沟道结型硅场效应管）
N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier Applications
|
Sanyo Electric Co., Ltd.
|
| 2SK1860 |
Silicon N-Channel Junction FET
|
Panasonic Semiconductor
|
| 2SK494 |
Silicon N-Channel Junction FET
|
Isahaya Electronics Corporation
Hitachi Semiconductor
|
| 2SK522 |
Silicon N-Channel Junction FET
|
Hitachi Semiconductor
|
| 2SK435 2SK435CTZ 2SK435DTZ |
Silicon N-Channel Junction FET
|
Renesas Electronics Corporation
|
| 2SK3396 |
Silicon N-Channel Junction FET
|
PANASONIC[Panasonic Semiconductor]
|
| 2SK0662G |
Silicon N-channel junction FET
|
Panasonic
|
