| PART |
Description |
Maker |
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| CJD42CPNP CJD41C CJD41CNPN CJD42C |
SMD Bipolar Power Transistor PNP General Purpose Amplifier/Switch
COMPLEMENTARY SILICON POWER TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| MJ15016 |
Complementary Silicon High-Power Transistor(15A,120V（集电极-发射极）,180W，补偿型，硅PNP大功率晶体管) 15 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-204AA
|
ON Semiconductor
|
| 2N5883 |
Complementary Silicon PNP Power Transistor(25A00W0V（集电极-发射极），补偿型PNP功率晶体 25 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
|
ON Semiconductor
|
| NTE262 NTE261 |
Silicon complementary PNP transistor. Darlington power amplifier.
Silicon Complementary Transistors Darlington Power Amplifier
|
NTE[NTE Electronics]
|
| MJD128T4G MJD128 |
Complementary Darlington Power Transistor
|
ONSEMI[ON Semiconductor]
|
| NJVMJD128T4G |
Complementary Darlington Power Transistor
|
ON Semiconductor
|
| MJ11028 MJ11029 MJ11033 MJ11030 MJ11031 MJ11032 |
COMPLEMENTARY DARLINGTON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
| BD244C BD243C |
COMPLEMENTARY SILICON POWER TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
