| PART |
Description |
Maker |
| PTB20195 |
150 Watts, 860-900 MHz Cellular Radio RF Power Transistor
|
ERICSSON[Ericsson]
|
| PTF10036 |
85 Watts, 86060 MHz GOLDMOS Field Effect Transistor
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
|
| PTF102028 |
18 Watts, 86060 MHz GOLDMOS Field Effect Transistor
18 Watts 860-960 MHz GOLDMOS Field Effect Transistor
18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTF10138 |
60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTFA081501E PTFA081501F |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864-900 MHz
|
Infineon Technologies AG
|
| PTB20162 |
40 Watts, 470-900 MHz RF Power Transistor
|
ERICSSON[Ericsson]
|
| MW4IC915MBR1 MW4IC915GMBR1 MW4IC915 |
MW4IC915MBR1. MW4IC915GMBR1 GSM/GSM EDGE. N-CDMA. W-CDMA. 860-960 MHz. 15 W. 26 V RF LDMOS Wideband Integrated Power Amplifiers MW4IC915MBR1MW4IC915GMBR1的GSM / GSM的EDGE网络 - CDMA技术。的W - CDMA860-960兆赫15日布什26最小输LDMOS的宽带集成功率放大器
|
飞思卡尔半导体(中国)有限公司
MOTOROLA[Motorola, Inc]
|
| 0910-300M |
Bipolar/LDMOS Transistor
300 Watts - 50 Volts, 150us, 5% Radar 890 - 1000 MHz
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
|
| MICRF003 MICRF003BM MICRF033BM MICRF003/033 |
RES, 14.3K, 1/16W, TKF, 1%, 0603
QwikRadiotm 900 MHz UHF Receiver Preliminary Information
QwikRadio™ 900 MHz UHF Receiver
|
Micrel Semiconductor,Inc.
MICREL[Micrel Semiconductor]
|
| MAAV-007087-000100 MAAV-007087-0001TB MAAV-007087- |
900 MHz - 2500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.5 dB INSERTION LOSS-MAX
Voltage Variable Attenuator 900 - 2500 MHz
|
Tyco Electronics
|
