| PART |
Description |
Maker |
| PEEL18CV8P-10 PEEL18CV8P-15 PEEL18CV8P-25 PEEL18CV |
CMOS Programmable Electrically Erasable Logic Device 的CMOS电可擦除可编程逻辑器件
CMOS Programmable Electrically Erasable Logic Device CMOS电可擦除可编程逻辑器件
GBASE 350 C5E PNK STRANDED BLK 500FT
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
International CMOS Technology
|
| IS93C46D IS93C46D-2ZI IS93C46D-2GI IS93C46D-2GLI I |
1-KBIT SERIAL ELECTRICALLY ERASABLE PROM 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8
1-KBIT SERIAL ELECTRICALLY ERASABLE PROM 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
1-KBIT SERIAL ELECTRICALLY ERASABLE PROM 1千位的电可擦除可编程ROM
|
Integrated Silicon Solution, Inc.
|
| PA7128J-15 PA7128J-20 PA7128JI-20 PA7128S-15 PA712 |
15ns programmable electrically erasable logic array
20ns programmable electrically erasable logic array
|
ICT
|
| BR24L16 BR24L16FJ-W BR24L16FVM-W BR24L16F-W BR24L1 |
2k8 bit electrically erasable PROM
2k】8 bit electrically erasable PROM
|
ROHM[Rohm]
|
| BR24L32 BR24L32FV-W BR24L32FJ-W BR24L32F-W BR24L32 |
4k8 bit electrically erasable PROM
4k】8 bit electrically erasable PROM
|
ROHM[Rohm]
|
| 24AA1603 24LC16B 24AA16-I/MS 24AA16-I/MSG 24AA16-I |
16K I2C垄芒 Serial EEPROM
16K I2C?/a> Serial EEPROM
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C™ compatible 2-wire serial interface bus. The 24LC16B features hardware write protect, Schmitt trigger in
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C™ ...
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I<SUP>2</SUP>C™ ...
16K I2C Serial EEPROM
|
Microchip Technology Inc.
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| GAL20V8A-20QJI GAL20V8A-25QJI GAL20V8A-20QPI GAL20 |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
Lattice Semiconductor, Corp.
|
| ISPGAL16Z8-20LJ ISPGAL16Z8-25P ISPGAL16Z8-25LJ ISP |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
Electronic Theatre Controls, Inc.
|
| PALCE16V8H-15JI/4 |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
Advanced Micro Devices, Inc.
|
| LVT16V8-6A LVT16V8-6DB |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
NXP Semiconductors N.V.
|
