PART |
Description |
Maker |
2N2221A2 2N2221AUBC 2N2222A JANS2N2222A JANS2N2222 |
NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) TECHNICAL DATA SHEET NPN SILICON SWITCHING TRANSISTOR
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Microsemi Corporation http://
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154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五(巴西)总裁| 7.5AI(丙
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NXP Semiconductors N.V. Bel Fuse, Inc. YEONHO Electronics Co., Ltd.
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JANS2N2369AUB JANTXV2N2369AUB |
15 V, NPN, Si, SMALL SIGNAL TRANSISTOR TECHNICAL DATA SHEET
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MICROSEMI CORP-LAWRENCE Microsemi Corporation
|
SEMD9 SEMD6 |
NPN/PNP Silicon Digital Transistor Array Preliminary data
|
INFINEON[Infineon Technologies AG]
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SEMD4 |
NPN/PNP Silicon Digital Transistor Array Preliminary data
|
INFINEON[Infineon Technologies AG]
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SEMD13 |
NPN/PNP Silicon Digital Transistor Array Preliminary data
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
MPS4124_D ON2321 MPS4124 |
AMPLIFIER TRANSISTOR(NPN SILICON) SEMICONDUCTOR TECHNICAL DATA From old datasheet system
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ON Semiconductor Motorola, Inc
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HR1L2Q HR1L3N HR1A4 HR1F3P HR1XXX HR1A3M HR1A4A HR |
HR1 Series Data Sheet | Data Sheet[04/2002] HR1系列数据表|数据表[04/2002] On-chip resistor PNP silicon epitaxial transistor For mid-speed switching 片上电阻进步党硅外延晶体管中速开 1 A, 60 V, PNP, Si, POWER TRANSISTOR Hybrid transistor
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DB Lectro, Inc. Marktech Optoelectronics NEC Corp. NEC[NEC]
|
ZX5T851A ZX5T851ASTZ ZX5T851ASTOA |
NPN Med Power Transistor 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE 4500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR From old datasheet system
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Zetex Semiconductor PLC ZETEX[Zetex Semiconductors] Diodes Incorporated
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CIL858O CIL859O CIL2229Y CIL2331 CSC2331 CIL857O C |
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | TO-237VAR TRANSISTOR | BJT | NPN | 300V V(BR)CEO | TO-237 TRANSISTOR | BJT | NPN | 150V V(BR)CEO | TO-237 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-237VAR TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 700MA I(C) | TO-237AA TRANSISTOR | BJT | NPN | 200V V(BR)CEO | TO-237VAR TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 1.5A I(C) | TO-237AA TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 1.5A I(C) | TO-237 TRANSISTOR | BJT | PNP | 160V V(BR)CEO | TO-237 晶体管|晶体管|进步党| 160V五(巴西)总裁|37 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-237AA
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Infineon Technologies AG
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KRC886T KRC881T KRC882T KRC883T KRC884T KRC885T KR |
Built in Bias Resistor EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING) (KRC881T - KRC886T) EPITAXIAL PLANAR NPN TRANSISTOR 300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
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Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
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