| PART |
Description |
Maker |
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| TIP105 TIP100 TIP106 TIP101 TIP102 TIP107 ON2977 |
DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
From old datasheet system
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| 2N6473 2N6474 2N6476 2N6475 |
COMPLEMENTARY SILICON SWITCHING TRANSITORS 4 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COMPLEMENTARY SILICON SWITCHING TRANSITORS 4 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COMPLEMENTARY SILICON SWITCHING TRANSITORS 4 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| NTE275 NTE274 |
Silicon complementary PNP transistor. Darlington power apmlifier, switch.
Silicon Complementary Transistors Darlington Power Amplifier, Switch
|
NTE[NTE Electronics]
|
| CSD794Y CSD794O CSD794AY |
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744Y
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB744O
10.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744AY
|
Continental Device India Limited
|
| 2N5883 |
Complementary Silicon PNP Power Transistor(25A00W0V（集电极-发射极），补偿型PNP功率晶体 25 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
|
ON Semiconductor
|
| 2N5883G 2N5884 2N5884G 2N5885G 2N5886G 2N5883 2N58 |
Complementary Silicon High−Power Transistors 25 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AA
Complementary Silicon High−Power Transistors
|
Rectron Semiconductor
ONSEMI[ON Semiconductor]
|
| NTHD3100C NTHD3100CT1 NTHD3100CT1G NTHD3100CT3 NTH |
Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™
Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™; Package: ChipFET™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 3000 2.9 A, 20 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
Power MOSFET 20V, 3.9A/4.4A, Complementary ChipFET(20V, 3.9A/4.4A功率MOSFET)
Power MOSFET 20 V, 3.9 A /−4.4 A, Complementary ChipFET
|
ON Semiconductor
|
| CJD210 CJD200 |
COMPLEMENTARY SILICON POWER TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| BDX34BG |
Darlington Complementary Silicon Power Transistors 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
ON Semiconductor
|
| CJD295510 CJD3055 CJD3055LEADFREE |
SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS
10 A, 60 V, NPN, Si, POWER TRANSISTOR
|
Central Semiconductor Corp
|
|
