| PART |
Description |
Maker |
| HS-22620RH HS0-22620RH-Q HS9-22620RH HS9-22620RH/P |
Rad Hard Dual/ Wideband/ High Input Impedance Uncompensated Operational Amplifier
Rad Hard Dual, Wideband, High Input Impedance Uncompensated Operational
Amplifier(抗辐射宽带、高非补偿输入阻抗运算放大器)
Rad Hard Dual, Wideband, High Input Impedance Uncompensated Operational Amplifier DUAL OP-AMP, 6000 uV OFFSET-MAX, 100 MHz BAND WIDTH, UUC18
|
Intersil Corporation
Intersil, Corp.
|
| HA-2620 HA-2626 HA-2625 |
Op Amp, 100MHz, High Input Impedance, Very Wideband, Uncompensated, Offset=0.5mV
Op Amp, 100MHz, High Input Impedance, Very Wideband, Uncompensated, Rad-Hard
Op Amp, 100MHz, High Input Impedance, Very Wideband, Uncompensated, Offset=3.0mV
|
Intersil
|
| T-12201G |
Wideband Impedance Matching Transformer
|
Rhombus Industries Inc.
|
| T-12077G |
Wideband Impedance Matching Transformer
|
Rhombus Industries Inc.
|
| 5962-8752805SX 5962-8752804RX 5962-8752804SX 5962- |
10µA, Low-Dropout, Precision Voltage Reference
Dual, High-Efficiency, Step-Down Controller with High Impedance in Shutdown
500kHz Multi-Output Power-Supply Controllers with High Impedance in Shutdown
TFT-LCD Step-Up DC-DC Converter 保险丝，可编程的PLD
|
Vishay Intertechnology, Inc.
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| UPC2726T00 UPC2726T-E3 UPC2726T |
1.6 GHz DIFFERENTIAL WIDEBAND SILICON WIDEBAND SILICON
|
NEC[NEC]
|
| 687KXM010M 688KXM010M 227KXM010M 228KXM010M 107KXM |
105隆?C Low Impedance Radial Lead Aluminum Electrolytic Capacitors
105掳C Low Impedance Radial Lead Aluminum Electrolytic Capacitors
105°C Low Impedance Radial Lead Aluminum Electrolytic Capacitors
|
Illinois Capacitor, Inc...
|
| IRF7910PBF08 IRF7910PBF-15 IRF7910TRPBF |
HEXFET Power MOSFET
Ultra-Low Gate Impedance
Ultra-Low Gate Impedance
|
International Rectifier
|
| BFG92A/X BFG92X |
NPN 5 GHz wideband transistor
NPN 5GHz wideband transistor(NPN 5G赫兹 宽带晶体
|
Philips Semiconductors
|
