PART |
Description |
Maker |
CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
2N3054 2N3054A |
NPN SILICON POWER TRANSISTOR Leaded Power Transistor General Purpose
|
Central Semiconductor C... Central Semiconductor Corp. CENTRAL[Central Semiconductor Corp]
|
2N6123 2N6124 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. 40.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 25 - 100 hFE.
|
Continental Device India Limited
|
CSB1436R CSB1436P CSB1436 |
1.500W Medium Power PNP Plastic Leaded Transistor. 20V Vceo, 5.000A Ic, 82 - 390 hFE. TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-126 晶体管|晶体管|进步党| 20V的五(巴西)总裁| 5A条一(c)|26 1.500W Medium Power PNP Plastic Leaded Transistor. 20V Vceo, 5.000A Ic, 82 - 180 hFE.
|
Electronic Theatre Controls, Inc. Continental Device India Limited
|
2N6034 2N6035 |
Leaded Power Transistor Darlington
|
Central Semiconductor
|
2N6548 |
Leaded Power Transistor Darlington
|
Central Semiconductor
|
2N6576 |
Leaded Power Transistor Darlington
|
Central Semiconductor
|
2N6125 |
Leaded Power Transistor General Purpose
|
Central Semiconductor
|
2N6497 2N6498 2N6499 |
Leaded Power Transistor General Purpose
|
Central Semiconductor
|
2N6247 2N4398 |
Leaded Power Transistor General Purpose
|
Central Semiconductor
|