PART |
Description |
Maker |
TGA2583-SM TGA2583-SM-15 |
2.7 to 3.7GHz, 10W GaN Power Amplifier
|
TriQuint Semiconductor
|
SZP-2026Z |
2.2-2.7GHz 2W InGaP Amplifier
|
SIRENZA[SIRENZA MICRODEVICES]
|
SPA-1426Z SPA-1426Z-EVB1 SPA-1426Z-EVB2 SPA-1426Z- |
0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER
|
RF Micro Devices http://
|
2SC5488A12 2SC5488A |
RF Transistor, 10V, 70mA, fT=7GHz, NPN Single SSFP VHF to UHF Wide-Band Low-Noise Amplifier Applications
|
ON Semiconductor Sanyo Semicon Device
|
EIA1011-4P |
10.7-11.7GHz 4W Internally Matched Power FET
|
Excelics Semiconductor
|
EIA1819-2P EIB1819-2P |
18.7-19.7GHz, 2W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
EIA1011-4P EIB1011-4P |
10.7-11.7GHz, 4W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
TIM7785-8UL06 |
HIGH POWER P1dB=39.5dBm at 7.7GHz to 8.5GHz
|
Toshiba Semiconductor
|
TIM3742-12UL09 |
HIGH POWER P1dB=41.5dBm at 3.7GHz to 4.2GHz
|
Toshiba Semiconductor
|
TIM7785-25UL |
HIGH POWER P1dB=44.5dBm at 7.7GHz to 8.5GHz
|
Toshiba Semiconductor
|
TIM7785-4UL09 |
HIGH POWER P1dB=36.5dBm at 7.7GHz to 8.5GHz
|
Toshiba Semiconductor
|
RFFM7600 RFFM7600PCK-410 RFFM7600SB RFFM7600SQ RFF |
5.0V, 2.5GHz TO 2.7GHz HIGH POWER FRONT END MODULE
|
RF Micro Devices
|