| PART |
Description |
Maker |
| Q62702-P1192 Q62702-P1058 BP103BF BP103B Q62702-P8 |
NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter PHOTO TRANSISTOR DETECTOR
TVS BIDIRECT 600W 9.0V SMB PHOTO TRANSISTOR DETECTOR
NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silizium - Fototransistor东北大学：叩- Silizium - Fototransistor麻省理工Tageslichtsperrfilter
TVS ZENER BIDIRECT 600W 85V SMB
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BP103 Q62702-P79-S4 BP103-2 BP103-3 BP103-4 BP103- |
From old datasheet system
NPN-Silizium-Fototransistor Silicon NPN Phototransistor PHOTO TRANSISTOR DETECTOR
NPN-Silizium-Fototransistor Silicon NPN Phototransistor Silizium - Fototransistor硅npn型光电晶体管
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BPX38 Q62702-P15-S5 BPX38-2 BPX38-3 BPX38-5 BPX8-4 |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor Silizium - Fototransistor硅npn型光电晶体管
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SFH3010 |
NPN-Silizium-Fototransistor
|
OSRAM GmbH
|
| Q62702-P957 SFH303 SFH303-2 SFH303F SFH303FA-4 SFH |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor PHOTO TRANSISTOR DETECTOR
MB 32C 26#20 6#12 SKT PLUG
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SFH320 SFH320-3 SFH320-4 SFH320F SFH320F-3 SFH320F |
NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package Silizium - Fototransistor即时贴片TOPLEDa - Geh锓硅npn型光电晶体管的表面贴装TOPLEDa，包
Silver Mica Capacitor; Capacitance:35pF; Capacitance Tolerance: 5%; Series:MIN; Voltage Rating:300VDC; Capacitor Dielectric Material:Mica; Package/Case:Surface Mount (SMD, SMT); Termination:SMD; Leaded Process Compatible:Yes RoHS Compliant: Yes
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| SFH3410-3_4 SFH3410-2_3 SFH3410-1_2 SFH3410 SFH341 |
NPN-Si-Fototransistor mit Vλ Charakteristik
NPN-Si-Fototransistor mit V楼毛 Charakteristik
NPN-Si-Fototransistor mit Vル Charakteristik
|
OSRAM GmbH
|
| BD165 |
(BD165 - BD169) SILIZIUM-NPN-EPITAXIAL-PLANAR-LEISTUNGSTRANSISTOREN SILICON NPN EPITAXIAL PLANAR POWRE TRANSISTORS
|
ETC
|
| Q65110A2741 SFH722112 |
GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor
GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor
|
OSRAM GmbH
|
| BPW33 BPW3301 |
Silizium-Fotodiode
|
OSRAM GmbH
|
