PART |
Description |
Maker |
2SD2396 D2396 2SD2396H |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220VAR 晶体管|晶体管|叩| 60V的五(巴西)总裁| 3A条一(c)|20VAR Low Frequency Transistor (60V, 3A) Low Frequency Transistor (60V/ 3A)
|
PCA Electronics, Inc. Rohm CO.,LTD.
|
DXT2010P5 DXT2010P5-13 DXT2010P5-15 |
60V NPN MEDIUM POWER TRANSISTOR PowerDI垄莽5 60V NPN MEDIUM POWER TRANSISTOR PowerDI?5
|
Diodes Incorporated
|
2SC3746 2SA1469 2SA1469S 2SA1469Q 2SC3746R |
60V/5A High-Speed Switching Applications TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-220VAR TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | SOT-186 晶体管|晶体管|叩| 60V的五(巴西)总裁| 5A条一(c)|的SOT - 186
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
ZX5T851A ZX5T851ASTZ ZX5T851ASTOA |
NPN Med Power Transistor 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE 4500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR From old datasheet system
|
Zetex Semiconductor PLC ZETEX[Zetex Semiconductors] Diodes Incorporated
|
HUF76423S3S HUF76423P3 FN4708 HUF76423S3ST HUF7642 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 36A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 60V的五(巴西)直| 36A条(丁)|63AB N-Channel NexFET Power MOSFET 8-SON -55 to 150 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFET From old datasheet system
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
2SC3254 2SC3254S |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7A I(C) | TO-220AB 60V/7A High-Speed Switching Applications
|
SANYO[Sanyo Semicon Device]
|
RFP3055LE RFD3055LESM RFD3055LE FN4044 RFD3055LESM |
11A/ 60V/ 0.107 Ohm/ Logic Level/ N-Channel Power MOSFETs TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 11A I(D) | TO-252AA 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs 11A 60V 0.107 Ohm Logic Level N-Channel Power MOSFETs From old datasheet system
|
INTERSIL[Intersil Corporation]
|
2SC5824_1 2SC5824 |
Power transistor (60V, 3A)
|
ROHM[Rohm]
|
2SB1565 |
Power Transistor (-60V, -3A)
|
ROHM[Rohm]
|