| PART |
Description |
Maker |
| 2SD2165 |
6 A, 100 V, NPN, Si, POWER TRANSISTOR
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
Silicon power transistor
|
NEC[NEC]
|
| 2SD560 2SD560LB 2SD560MB |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁| 5A条一（c）| TO - 220AB现有
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220AB
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
Silicon power transistor
|
NEC, Corp.
NEC Corp.
|
| KSD986 |
NPN (LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE)
|
SAMSUNG[Samsung semiconductor]
|
| KSD227 |
NPN (LOW FREQUENCY POWER AMPLIFIER)
|
SAMSUNG[Samsung semiconductor]
|
| KSD2012 KSD2012GTU |
LOW FREQUENCY POWER AMPLIFIER 3 A, 60 V, NPN, Si, POWER TRANSISTOR
NPN Epitaxial Silicon Transistor
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 310-025107-012 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-024109-011 024109-011 |
Filtered Low Noise Ampli er
|
API Technologies Corp
Spectrum Microwave, Inc.
|
| 310-024107-021 024107-021 |
Filtered Low Noise Ampli er
|
API Technologies Corp
Spectrum Microwave, Inc.
|
| 310-025109-012 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 2SC3265 |
NPN EPITAXIAL TYPE (LOW FREQUENCY POWER AMPLIFIER/ POWER SWITCHING APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SD525 |
LOW FREQUENCY POWER AMPLIFIER(NPN EPITAXIAL)
|
WINGS[Wing Shing Computer Components]
|
