| PART |
Description |
Maker |
| 2N1122 2N1405 2N1407 2N1101 2N1140 2N1535 2N1472 2 |
TRANSISTOR | BJT | PNP | 11V V(BR)CEO | 50MA I(C) | TO-24
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-12
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-22
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 100MA I(C) | TO-9
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3.5A I(C) | IST-3RT-1/2
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 50MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 50A I(C) | TO-36
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 7.5A I(C) | TO-82
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 7.5A I(C) | TO-82
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 12A I(C) | TO-3
TRANSISTOR | BJT | PNP | 110V V(BR)CEO | TO-5
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 100MA I(C) | TO-5
TRANSISTOR | BJT | NPN | 25MA I(C) | TO-22VAR
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 25A I(C) | TO-36
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 7A I(C) | TO-3 晶体管|晶体管|进步党| 50V五（巴西）总裁| 7A条一（c）|
5-Pin, Multiple-Input, Programmable Reset ICs 晶体管|晶体管|进步党| 12V的五（巴西）总裁| 100mA的一（c）|
5-Pin, Multiple-Input, Programmable Reset ICs 晶体管|晶体管|进步党| 65V的五（巴西）总裁|5A一（c）|6
TRANSISTOR | BJT | PNP | 15A I(C) | TO-36
TRANSISTOR | BJT | PNP | 38V V(BR)CEO | 15A I(C) | TO-41
|
NXP Semiconductors N.V.
Microsemi, Corp.
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| 2N6836 MJ15001 MJ4031 MJ15025 |
European Master Selection Guide 1986
15 A, 140 V, NPN, Si, POWER TRANSISTOR
16 A, 80 V, PNP, Si, POWER TRANSISTOR
16 A, 250 V, PNP, Si, POWER TRANSISTOR
|
Motorola
AMERICAN MICROSEMICONDUCTOR INC
|
| FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SO
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管| npn型| 150伏五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SO 晶体管|晶体管|进步党| 100V的五（巴西）总裁|甲一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 1A条一（c）|采用SOT - 89
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | SO 晶体管|晶体管|叩| 30V的五（巴西）总裁| 400mA的一（c）|
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
|
Zetex Semiconductor PLC
Fujitsu, Ltd.
Bourns, Inc.
Amphenol, Corp.
|
| 2SA1319-AA 2SB631-LS 2SD600K-LS 2SB631-YA 2SA1249- |
700 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
1 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-126
1 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-126
1.5 A, 160 V, PNP, Si, POWER TRANSISTOR, TO-126
|
SANYO SEMICONDUCTOR CO LTD
|
| BUX77A-220M BUX78A-220M BUX78A-JQR-A |
SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS
8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-257AB
8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-257AB
|
Seme LAB
SEMELAB LTD
|
| SLA4313 |
NPN PNP Silicon Epitaxial Planar 5 A, 35 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR
|
Sanken Electric Co., Ltd.
SANKEN[Sanken electric]
|
| 2SB1426Q 2SB1426R 2SD1960 2SC3801 2SD2152 2SA821SN |
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1.2A I(C) | SPAK 晶体管|晶体管|叩| 25V的五（巴西）总裁| 1.2AI（丙）| SPAK
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 50MA I(C) | SPAK 晶体管|晶体管|叩| 100V的五（巴西）总裁| 50mA的一（c）| SPAK
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | TO-92
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 200MA I(C) | SPAK
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | SPAK
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | TO-92
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 50MA I(C) | SPAK
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-92
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-92
|
Rohm Co., Ltd.
PHOENIX CONTACT Deutschland GmbH
YEONHO Electronics Co., Ltd.
STMicroelectronics N.V.
TE Connectivity, Ltd.
|
| MJL3281A MJL1302A |
Complementary NPN-PNP Silicon Power Bipolar Transistor
Power 15A 200V PNP
|
ON Semiconductor
|
| BC847BPDW1T1 BC847CPDW1T1 BC848BPDW1T1 BC846BPDW1T |
Dual General Purpose Amplifier Transistors (NPN PNP)(-45V通用型双放大器晶体管(NPN PNP，SOT-363封装)) 100 mA, 45 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
From old datasheet system
Dual General Purpose Transistors(NPN/PNP Duals)
|
ON Semiconductor
|
|
