PART |
Description |
Maker |
AT27BV1024 AT27BV1024-12JU AT27BV102407 AT27BV1024 |
1-Megabit (64K x 16) Unregulated Battery-Voltage High-Speed OTP EPROM
|
ATMEL Corporation
|
AT28BV64B-20SC AT28BV64B-20SI AT28BV64B-20TC AT28B |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 64K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt
|
Atmel
|
AT27LV512A07 AT27LV512A-55RU AT27LV512A-90JI AT27L |
90NS, SOIC, IND TEMP, GREEN(EPROM) 64K X 8 OTPROM, 55 ns, PDSO28 512K (64K x 8) Low Voltage OTP EPROM
|
Atmel, Corp. ATMEL Corporation
|
25C02 CAT25C02 25C01 CAT25C01 25C04 CAT25C04 25C08 |
1K/2K/4K/8K/16K SPI Serial CMOS E2PROM 64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM 1K/2K/4K/8K/16KSPISerialCMOSE2PROM
|
CatalystSemiconductor http:// CATALYST[Catalyst Semiconductor]
|
CY27H512-30JC CY27H512-30WC CY27H512-35HC CY27H512 |
64K x 8 High-Speed CMOS EPROM 64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 25 ns, PDSO28 64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 55 ns, PDSO28 64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 30 ns, PDIP28 64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 55 ns, CDIP28 64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 45 ns, CDIP28 64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 55 ns, CDIP28 64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 45 ns, CQCC32 64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 70 ns, PDIP28 64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 70 ns, PQCC32 64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 70 ns, CQCC32 64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 70 ns, PDSO28 CAP SM CER 2200PFD 50V 10% X7R 0805
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
|
GS820E32T-66 GS820E32T-100 GS820E32Q-150 GS820E32Q |
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM 150MHz 9ns 64K x 32 2M synchronous burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100 64K X 32 CACHE SRAM, 12 ns, PQFP100 64K X 32 CACHE SRAM, 10 ns, PQFP100 5.6UF/100VDC METAL POLY CAP 200万同步突发静态存储器 2M Synchronous Burst SRAM 200万同步突发静态存储器 Socket Adapter; For Use With:ATMEGA168-TQFP32, ATMEGA48-TQFP32, ATMEGA88-TQFP32, ATMEGA8L-TQFP32, ATMEGA8L(FAST)-TQFP32; Pitch Spacing:.8mm 64K x 32 / 2M Synchronous Burst SRAM 117MHz 11ns 64K x 32 2M synchronous burst SRAM 66MHz 18ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers
|
7C4282V/92V-15 7C4282V/92V-10 7C4282V/92V-25 |
64K/128Kx9 Low Voltage Deep Sync FIFOs w/ Retransmit & Depth Expansion 64K/128Kx9 Low Voltage Deep Sync FIFOs w/ Retransmit & Depth Expansion 64K/128Kx9低电压后同步FIFO的瓦重发
|
Cypress Semiconductor Corp.
|
IDT71016 IDT71016S12PHG IDT71016S12PHGI IDT71016S1 |
CMOS Static RAM 1 Meg (64K x 16-Bit) 64K x 16 Static RAM Filter Module w/out Resistor Network 64K X 16 STANDARD SRAM, 20 ns, PDSO44 CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 12 ns, PDSO44 Octal Buffers And Line/MOS Drivers With 3-State Outputs 20-SOIC -40 to 85 64K X 16 STANDARD SRAM, 15 ns, PDSO44
|
Integrated Device Techn... IDT[Integrated Device Technology] Integrated Device Technology, Inc. SRAM INTEGRATED DEVICE TECHNOLOGY INC
|
W27C512-45 W27C512P-12 W27C512P-45 W27C512P-70 W27 |
FAN 24 DC MUFFIN MC24H3 64K X 8 EEPROM 12V, 90 ns, PDIP28 Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:18; No. Strands x Strand Size:19 x 30; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:4; Leaded Process Compatible:Yes; Voltage Nom.:300V RoHS Compliant: Yes 64K X 8 ELECTRICALLY ERASABLE EPROM
|
Winbond Electronics, Corp. Winbond Electronics Corp WINBOND[Winbond]
|