| PART |
Description |
Maker |
| KMM5364005CSW KMM5364005CSWG |
4M X 36 DRAM SIMM USING 4MX16 & QUAD CAS 4MX4, 4K REFRESH, 5V
4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
|
SAMSUNG[Samsung semiconductor]
|
| HY57V161610ET-7I HY57V161610ET-10I HY57V161610ET-1 |
SDRAM - 16Mb
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| M390S3320BT1 |
32MB x 72 SDRAM DIMM with PLL & Register based on 32MB x 4, 4Banks, 4KB Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
| KMM5328004CSW |
8MB X 32 DRAM Simm Using 4MB X 16
|
Samsung Semiconductor
|
| KMM5328100CK KMM5328100CKG KMM5328000CKG KMM532800 |
8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM53216000BK |
16MBx32 DRAM Simm Using 16MBx4
|
Samsung Semiconductor
|
| KMM5362000BH |
2M x 36 DRAM SIMM Memory Module
|
Samsung Electronics
|
| KMM53216004CK |
16MBx32 DRAM Simm Using 16MBx4
|
Samsung Semiconductor
|
| KMM5364005BSW |
4M x 36 DRAM SIMM(4M x 36 动RAM模块) 4米36的DRAM上海药物研究所米36动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| KMM53232000BK KMM53232000BKG |
32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
