PART |
Description |
Maker |
HM62V16256BLTT-8SL HM62V16256BLTT-8 HM62V16256BLTT |
4 M SRAM (256-kword ×16-bit)(4 M 静态RAM(256k字6) 四米的SRAM56 - KWord的16位)个M静态随机存储器56k字16位) From old datasheet system SRAM,256KX16,CMOS,TSOP,44PIN,PLASTIC
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Hitachi,Ltd. Hitachi America
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TC55V16256FTI-15 TC55V16256FTI-12 |
SRAM,256KX16,CMOS,TSOP,44PIN,PLASTIC From old datasheet system
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Toshiba.
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TC55V16256FT-15 TC55V16256FT-12 |
SRAM,256KX16,CMOS,TSOP,44PIN,PLASTIC From old datasheet system
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Toshiba.
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N04M1618L1AT-85I N04M1618L1A N04M1618L1AB N04M1618 |
4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx16 bit
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http:// NANOAMP[NanoAmp Solutions, Inc.]
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HY62VT08081E-DGC HY62VT08081E-DGE HY62VT08081E-DGI |
Low Power Slow SRAM - 256Kb SWITCH, REED SPST-NO 10W SMD QSW-REED,10MM,10W,SMD 9 POS FR-4 SIP SOCKET x8|3V|70/85/100|Low Power Slow SRAM - 256K x8|3.3V|70/85/100|Low Power Slow SRAM - 256K 32Kx8bit CMOS SRAM 32Kx8bit CMOS SRAM x8 SRAM x8的SRAM x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDSO28 x8 SRAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28 x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDIP28
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HYNIX[Hynix Semiconductor] Hynix Semiconductor Inc. Hynix Semiconductor, Inc. Analog Devices, Inc. Panasonic Industrial Solutions
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WMS512K8BV-15DEIE WMS512K8BV-15DJCE WMS512K8BV-15F |
512K X 8 STANDARD SRAM, 20 ns, CDSO32 512Kx8 MONOLITHIC SRAM
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WHITE ELECTRONIC DESIGNS CORP http:// White Electronic Design...
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5962-9561307HZX WMS512K8L-15CLC WMS512K8L-15CLCA W |
512Kx8 MONOLITHIC SRAM BOX 4.38X3.25X0.91BLACK BULK STD BLK BOX (3.25X4.38X0.9) STD-I BLK BOX (3.25X4.38X0.9) BOX END PANEL INFRA-RED A27 SERI 512Kx8整装静态存储器 BOX 4.38X3.25X0.91 WALL MT BLK 512Kx8整装静态存储器 BOX 3.3X5.6X1.5 STD EMI BLACK 512Kx8整装静态存储器 BOX 4.38X3.25X1.91 WALL MT BLK 512Kx8整装静态存储器 BOX 4.38X3.25X1.91 GRY 512Kx8整装静态存储器 BOX 4.38X3.25X1.91 WALL MT GRY 512Kx8整装静态存储器 BOX 6.88X4.88X.9 BLK 512Kx8整装静态存储器 BOX STD ALM (4.88X6.88X.9) 512Kx8整装静态存储器 BOX 5.63X3.25X1.51 WALL MT GRY 512Kx8整装静态存储器 BOX 5.63X3.25X1.51 WALL MT BLK 512Kx8整装静态存储器 STD ALMOND BOX (3.25X4.38X0.9) 512Kx8整装静态存储器 BOX 5.63 X 3.26 X .91 GRY 512Kx8整装静态存储器 512Kx8 MONOLITHIC SRAM 512Kx8整装静态存储器 END PANEL W/DB25 FOR A-31 BLK 512Kx8整装静态存储器 BOX 4.38X3.25X2.01 BLK 512Kx8整装静态存储器 BOX 4.38X3.25X2.01 GRY 512Kx8整装静态存储器 DIODE, MICRO-MELFDIODE, MICRO-MELF; Voltage, Vrrm:100V; Current, If av:0.15A; Case style:MicroMELF; Current, If max:0.2A; Current, Ifrm:0.45mA; Current, Ifs max:2A; Diameter, External:1.35mm; Diode type:Small signal; Length / Height, SENSOR HI-IMP 30PSIA DIP PKG 20ns; 512K x 8 monilithic SRAM, SMD 5962-95613 35ns; 512K x 8 monilithic SRAM, SMD 5962-95613 15ns; 512K x 8 monilithic SRAM, SMD 5962-95613
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Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers List of Unclassifed Man... White Electronic Designs
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A82DL16X4T A82DL1624 A82DL1624TG-70 A82DL1624TG-70 |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit (2Mx8 Bit/1Simultaneous Operation Flash Memory and 4M (256Kx16 Bit) S
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AMICC[AMIC Technology]
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EM6156K800VTA-55 EM6156K1600VTA-55 EM6156K800WTA-5 |
256Kx16 LP SRAM
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Eorex Corporation http://
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HY62256AR1-I85 HY62256BLLT1-70 HY62256BLLT1-70I HY |
IC-SMD-SRAM 256K x8 SRAM x8的SRAM
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Maxim Integrated Products, Inc. NXP Semiconductors N.V.
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