| PART |
Description |
Maker |
| 1N5300 1N5301 1N5287 1N5296 1N5314 1N5313 1N5295 1 |
CURRENT LIMITER FIELD EFFECT DIODES
MOSFET P-CH 45V 230MA TO-92
MOSFET N-CH 200V 120MA TO-92
|
KNOX[Knox Semiconductor Inc]
KNOX[Knox Semiconductor, Inc]
Knox Semiconductor Inc
|
| STIL02-P5 9060 |
AC INRUSH CURRENT LIMITER
AC inrush current limiter
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| NIMD6302R2-D |
HDPlus Dual N-Channel Self-protected Field Effect Transistors with 1:200 Current Sense FET
|
ON Semiconductor
|
| CD5290 CD5291 CD5292 CD5293 CD5294 CD5295 CD5296 C |
Current Limiter Diode
CURRENT REGULATOR CHIPS
|
MICROSEMI[Microsemi Corporation]
|
| DCR258 DCR250 DCR251 DCR252 DCR253 DCR254 DCR255 D |
Current Limiter Diode
CURRENT REGULATOR DIODES
|
MICROSEMI[Microsemi Corporation]
|
| MTM8N35 MTM8N40 MTH8N40 MTH8N35 |
(MTH8N35 / MTH8N40) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
Motorola Semiconductor
MOTOROLA[Motorola, Inc]
|
| 2SK363 |
Field Effect Transistor Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
|
TOSHIBA
|
| SMAJ5304 SMAJ5305 SMAJ5309 SMAJ5303 SMAJ5307 SMAJ5 |
Current Limiter Diode
|
Microsemi
|
| MTM12P10 MTP12P06 MTP12P10 |
POWER FIELD EFFECT TRANSISTOR 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
(MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| RFH35N10 RFH35N08 |
POWER MOS FIELD - EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| IRF452 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A.
|
General Electric Solid State
|
