| PART |
Description |
Maker |
| LNA2801L |
GaAlAs on GaAs Infrared Light Emitting Diode
|
PANASONIC[Panasonic Semiconductor]
|
| MIE-114A1 114A1 |
Infrared Emitting Diodes (IRED)
GaAlAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-334H4 334H4 |
GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE 发动器的T 1包红外发光二极管
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| TSHA5503 TSHA5502 TSHA5501 TSHA5500 TSHA550 |
GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package 红外发光二极管的GaAIAs在？5毫米（翻 13 / 4）包
From old datasheet system
GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package
|
Vishay Intertechnology, Inc.
TFUNK[Vishay Telefunken]
|
| TSHA440. TSHA4400 TSHA440 TSHA4401 |
GaAlAs Infrared Emitting Diodes in ?3 mm (T-1) Package
From old datasheet system
GaAlAs Infrared Emitting Diodes in 3 mm (T-1) Package
GaAlAs Infrared Emitting Diodes in ? 3 mm (T?1)Package
|
VISAY[Vishay Siliconix]
TFUNK[Vishay Telefunken]
|
| OP233 OP232 OP231 |
GaAs HERMETIC INFRARED EMITTING DIODES
GaALAs Hermetic Infrared Emitting Diode(铝砷化镓密封红外发光二极工作温度范围-65 125
|
OPTEK Technologies
Optek Technology
|
| Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器，红外Lumineszenzdiode GaAlA红外发射
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| VTE7173 VTE7172 |
GaAlAs Infrared Emitting Diodes
|
PERKINELMER[PerkinElmer Optoelectronics]
|
| KLB-16AI-94 |
Infrared Emitting Diode(GaAlAs)
|
KODENSHI KOREA CORP.
|
| HE7601SG |
GaAlAs Infrared Emitting Diode
|
OPNEXT[Opnext. Inc.]
|
| HE8812SG |
GaAlAs Infrared Emitting Diode
|
OPNEXT[Opnext. Inc.]
|
| HE8811 |
GaAlAs Infrared Emitting Diode
|
OPNEXT[Opnext. Inc.]
|
