| PART |
Description |
Maker |
| HN2E04F |
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
|
Toshiba Corporation
Toshiba Semiconductor
|
| SSM5H16TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
| TPCP8J01 |
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) Silicon NPN Epitaxial Type
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type
MOSFET TPC Series
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| P412025 PS4125 P411825 P412225 P412425 |
POW-R-BLOK Single Diode Isolated Module (2500 Amperes / Up to 2400 Volts) POW - r的，单台BLOk反应腔二极管隔离模块（二五?安高达2400伏特
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| TH50VPN564 TH50VPN5640EBSB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS PSEUDO SRAM AND NAND E2PROM MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA
|
| CYM1841APR-20C CYM1841BPZ-25C CYM1841APY-20C CYM18 |
x32 SRAM Module X32号的SRAM模块
256K X 32 MULTI DEVICE SRAM MODULE, 15 ns, PSMA72 PLASTIC, SIMM-72
256K X 32 MULTI DEVICE SRAM MODULE, 35 ns, PSMA72 PLASTIC, SIMM-72
256K X 32 MULTI DEVICE SRAM MODULE, 20 ns, PSMA72 PLASTIC, SIMM-72
256K X 32 MULTI DEVICE SRAM MODULE, 45 ns, PSMA72 PLASTIC, SIMM-72
256K X 32 MULTI DEVICE SRAM MODULE, 45 ns, PSMA64 PLASTIC, SIMM-64
256K X 32 MULTI DEVICE SRAM MODULE, 25 ns, PSMA64 PLASTIC, SIMM-64
256K X 32 MULTI DEVICE SRAM MODULE, 15 ns, PZMA64 PLASTIC, ZIP-64
|
Cypress Semiconductor, Corp.
Everlight Electronics Co., Ltd.
Pyramid Semiconductor, Corp.
YEONHO Electronics Co., Ltd.
|
| WS512K8L-20CM WS512K8L-20CQA WS512K8-XCX WS512K8-2 |
512K X 8 MULTI DEVICE SRAM MODULE, 45 ns, CDIP32
512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, CDIP32
512K X 8 MULTI DEVICE SRAM MODULE, 25 ns, CDIP32
512Kx8 SRAM MODULE, SMD 5962-92078
|
WEDC[White Electronic Designs Corporation]
|
| TPCP8J0107 |
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type
|
Toshiba Semiconductor
|
| CE201210-6N8J CE201210-5N6J CE201210-4N7J CE201210 |
IC,MOT,MC68HC908GR8CP, DIP-28, MCU FLASH 8BIT 8MHZ 4K
IC,MCU,MC68HC908JB8ADW,8-BIT SOIC-28,21 I/O,3MHZ
IC,MCU,MC68HC711E9CFN2,8-BIT 2MHz,PLCC52
8-BIT, OTPROM, 2.1 MHz, MICROCONTROLLER, PDIP20
IC,MCU,MC68HC908KX8CDW,8-BIT SOIC-16,13 I/O,8MHZ
Multi-Layer Chip Inductors 1 ELEMENT, 0.12 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0056 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.33 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0027 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0068 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0082 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
IC,MCU,MC68HC705C9ACFN,8-BIT PLCC-44,31 I/O,2MHZ 多层片式电感
Multi-Layer Chip Inductors 1 ELEMENT, 0.39 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns Inc.
Bourns, Inc.
|
| P1200SL P2000SL |
LCAS Asymmetrical Discrete Device
|
Littelfuse
|
| WS128K32V-35HS WS128K32V-35HC |
512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, HIP66
512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, CPGA66
|
WHITE ELECTRONIC DESIGNS CORP
|
|
