| PART |
Description |
Maker |
| LET19060C |
RF POWER TRANSISTORS Ldmos Enhanced Technology RF功率晶体管LDMOS的增强技
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| RC1206FR--108R2L B41694A5477Q7 C5750X7S2A106M AFT2 |
RF Power LDMOS Transistors
|
Freescale Semiconductor, Inc
Freescale Semiconductor...
|
| LET9085 |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY
RF POWER TRANSISTORS Ldmos Enhanced Technology
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| LET9006 |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
|
STMicroelectronics
|
| AFT21S232SR3 AFT21S230SR3 |
RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
|
| MRFE6VP61K25GSR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 M |
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
Freescale Semiconductor...
|
| BLF6G27S-4508 BLF6G27S-45 BLF6G27-45 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
WiMAX power LDMOS transistor
|
NXP Semiconductors N.V.
|
| MHPA18010 |
MHPA18010 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier
CDMA BAND RF LINEAR LDMOS AMPLIFIER
|
MOTOROLA[Motorola, Inc]
|
| 1011LD110 |
RF Power Transistors: AVIONICS
110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET
|
ADPOW[Advanced Power Technology]
|
| BLF6G22L-40BN |
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
