PART |
Description |
Maker |
MGP20N40CL |
CAP 0.1UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22 SMARTDISCRETES Internally Clamped / N-Channel IGBT SMARTDISCRETES Internally Clamped, N-Channel IGBT
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Motorola, Inc. MOTOROLA[Motorola, Inc]
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MGP20N14CL_D ON1860 MGP20N14CL |
SMARTDISCRETES Internally Clamped, N-Channel IGBT From old datasheet system 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT V ce(on) = 1.9 VOLTS 135 VOLTS (CLAMPED)
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ONSEMI[ON Semiconductor]
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MGP20N35CL_D ON1862 MGP20N35CL |
SMARTDISCRETES Internally Clamped, N-Channel IGBT From old datasheet system 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT V CE(on) = 1.8 VOLTS 350 VOLTS (CLAMPED)
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ONSEMI[ON Semiconductor]
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MGFK36V4045 |
RECTIFIER SCHOTTKY SINGLE 2A 100V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL 14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET 14.0-14.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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AGB3311 AGB3311S24Q1 AGB3311_REV_1.0 |
50 High Linearity Low Noise Internally Biased Wideband Gain Block 50?/a> High Linearity Low Noise Internally Biased Wideband Gain Block 50蟹 High Linearity Low Noise Internally Biased Wideband Gain Block 50з High Linearity Low Noise Internally Biased Wideband Gain Block From old datasheet system
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ANADIGICS[ANADIGICS, Inc]
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CAT93C56JA CAT93C56JE CAT93C56JI CAT93C56KA CAT93C |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS 2K-Bit Microwire Serial EEPROM
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Samsung Semiconductor Co., Ltd. Macronix International Co., Ltd. HIROSE ELECTRIC Co., Ltd. Microchip Technology, Inc. Rohm Co., Ltd. Vicor, Corp. CATALYST[Catalyst Semiconductor] http://
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MGFC26V5964A MGFC36V5964A MGFC36V59964A |
5.9-6.4 GHz BAND 4W Internally Matched GaAs FET 5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET 5.9-6.4GHz band 4W internally matched GaAs FET
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Mitsubishi Electric Corporation
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MGFK25V4045 K254045 |
14.0-14.5GHz BAND 0.3W INTERNALLY MATCHED GaAs FET From old datasheet system 14.0~14.5GHZ BAND 0.3W INTERNALLY MATCHED GAAS FET
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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MGFK30V4045 K304045 |
14.0~14.5GHZ BAND 1W INTERNALLY MATCHED GAAS FET From old datasheet system 14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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MGFK35V4045 K354045 |
14.0-14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET From old datasheet system 14.0~14.5GHZ BAND 3W INTERNALLY MATCHED GAAS FET
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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MGFC36V5964A C365964A |
5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET From old datasheet system 5.9~6.4GHZ BAND 4W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
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MGFC42V4450A C424450A |
From old datasheet system 4.4~5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET 4.4 - 5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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