| PART |
Description |
Maker |
| 2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A.
|
USHA India LTD
|
| 2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W.
|
USHA India LTD
|
| 2SA1617 |
Collector-base voltage VCBO -55 V Emitter-base voltage VEBO -5 V
|
TY Semiconductor Co., Ltd
|
| OP755D OP755A OP755B OP755C |
NPN Photo transistor with Base-Emitter Resistor
|
OPTEK[OPTEK Technologies]
|
| HI667A HI649A |
Emitter to base voltage:5V 1A PNP epitaxial planar transistor
|
Hi-Sincerity Microelectronics
|
| MJ10020-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode
|
ON Semiconductor
|
| MJ10005 MJ10004 |
SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE
|
Boca Semiconductor Corp...
Boca Semiconductor Corporation
Boca Semiconductor Corporat...
|
| MJ10009-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode
|
ON Semiconductor
|
| MJ10006 MJ10007 |
SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR WITH BASE-EMITTER SPEEDUP DIODE
|
Boca Semiconductor Corp...
BOCA[Boca Semiconductor Corporation]
|
| MJD117L MJD117 |
EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC(Korea)
KEC[KEC(Korea Electronics)]
|
| TIP142 TIP140 TIP141 TIP142TU |
Monolithic Construction With Built In Base- Emitter Shunt Resistors
NPN Epitaxial Silicon Darlington Transistor
|
FAIRCHILD SEMICONDUCTOR CORP
http://
FAIRCHILD[Fairchild Semiconductor]
|
