| PART |
Description |
Maker |
| SC070 |
Schottky Die 70 x 92 Mils
|
International Rectifier
|
| HUF76633P312 |
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET? Power MOSFET
|
Fairchild Semiconductor
|
| 2SK3781-01R |
DIODE SCHOTTKY SINGLE 25V 200mW 0.33V-vf 200mA-IFM 2mA-IF 0.5uA-IR SOD-323 3K/REEL 73 A, 200 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET
N-CHANNEL SILICON POWER MOSFET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| SC275..5.SERIES |
SCHOTTKY DIE 275 x 275 mils
|
International Rectifier
|
| AT24C512-W2.7-11 |
10MS, DIE, 2.7V, 11 MILS THICKNESS(SERIAL EE)
|
ATMEL CORP
|
| IS9-2100ARH/PROTO 5962F9953602QXC IS9-2100ARH-Q IS |
High Frequency Half Bridge Driver, Rad-Hard, without UVLO
RES POWER .036 OHM 3W 5% SMT
Radiation Hardened High Frequency Half Bridge Driver 1.5 A HALF BRDG BASED MOSFET DRIVER, CDFP16
|
Intersil Corporation
Intersil, Corp.
|
| 408-8737 |
The die assembly consists of an indenter die and nest die. Each die is held in the tool by a single screw
|
Tyco Electronics
|
| SB039C015-1-W-AG |
Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 1 Amp, 0.35VF.
|
TRANSYS Electronics Limited
|
| SB039C025-0.5-W-AG |
Schottky cr Barrier Diode Wafer 39 Mils, 25 Volt, 0.5 Amp, 0.34VF.
|
TRANSYS Electronics Limited
|
