| PART |
Description |
Maker |
| BS62LV256PIP70 BS62LV256PIG55 BS62LV256PIP55 BS62L |
Very Low Power CMOS SRAM 32K X 8 bit 32K X 8 STANDARD SRAM, 70 ns, PDIP28
Very Low Power CMOS SRAM 32K X 8 bit 32K X 8 STANDARD SRAM, 55 ns, PDIP28
|
BRILLIANCE SEMICONDUCTOR, Inc.
Brilliance Semiconducto...
|
| LY62256SL LY62256SV LY62256RL LY62256 LY62256DL LY |
32K X 8 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| LY62L256 LY62L256E LY62L256I LY62L256PL LY62L256PV |
32K X 8 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| P4C1256L70SNILF P4C1256L55PILF P4C1256L70PCLF P4C1 |
LOW POWER 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28
LOW POWER 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 55 ns, PDIP28
LOW POWER 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 70 ns, PDIP28
LOW POWER 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 70 ns, CDIP28
LOW POWER 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 55 ns, PDSO28
|
Pyramid Semiconductor, Corp.
|
| IS62C256AL-45ULI IS62C256AL-45UI IS62C256AL-45TL |
32K x 8 LOW POWER CMOS STATIC RAM 32K X 8 STANDARD SRAM, 45 ns, PDSO28
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| BS62UV256DIG10 BS62UV256DIG15 BS62UV256PIG10 BS62U |
Ultra Low Power CMOS SRAM 32K X 8 bit
Ultra Low Power CMOS SRAM 32K X 8 bit
|
Brilliance Semiconducto...
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| UPD43257BGU-70L UPD43257BGU-70LL UPD43257BGU-85L U |
32K X 8 STANDARD SRAM, 70 ns, PDSO28
MOS INTEGRATED CIRCUIT 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
|
NEC
|
| IDT71008S12Y IDT71008S20PH |
cmos static ram 32K*16-BIT 32K X 16 STANDARD SRAM, 12 ns, PDSO44
|
Integrated Device Technology, Inc.
|
| K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM
55ns; 128 x 8-bit low power CMOS static RAM
70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| T15M256B T15M256B-70D T15M256B-70DI T15M256B-70J T |
32K X 8 LOW POWER CMOS STATIC RAM
|
TM Technology, Inc.
TMT[Taiwan Memory Technology]
|
| IS65C256AL12 IS62C256AL IS65C256AL-45ULA3 IS65C256 |
32K x 8 LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
Integrated Silicon Solution...
Integrated Silicon Solu...
|
